8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q10.fm - Rev. E 6/04 EN
19 ©2001 Micron Technology, Inc. All rights reserved.
NOTE:
1. Vcc = MAX Vcc during ICC tests.
2. I
CC is dependent on cycle rates.
3. I
CC is dependent on output loading. Specified values are obtained with the outputs open.
Table 10: Capacitance
(T
A
= 25°C; f = 1 MHz)
PARAMETER/CONDITION SYMBOL MAX UNITS NOTES
Input Capacitance
C
I 9pF
Output Capacitance
C
O 12 pF
Table 11: READ and STANDBY Current Drain
1
Commercial Temperature (0°C ≤ T
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
A
≤ +85°C)
PARAMETER/CONDITION SYMBOL MAX UNITS NOTES
READ CURRENT: WORD-WIDE
(CE# ≤ 0.2V; OE# Vcc - 0.2V; f = 5 MHz;
Other inputs ≤ 0.2V or Vcc - 0.2V; RP# Vcc - 0.2V)
I
CC115mA2, 3
READ CURRENT: BYTE-WIDE
(CE# ≤ 0.2V; OE# Vcc - 0.2V; f = 5 MHz;
Other inputs ≤ 0.2V or Vcc - 0.2V; RP# = Vcc - 0.2V)
I
CC215mA2, 3
STANDBY CURRENT: TTL INPUT LEVELS
Vcc power supply standby current
(CE# = RP# = V
IH; Other inputs = VIL or VIH)
I
CC32mA
STANDBY CURRENT: CMOS INPUT LEVELS
Vcc power supply standby current
(CE# = RP# = Vcc - 0.2V)
I
CC4100 µA
DEEP POWER-DOWN CURRENT: Vcc SUPPLY
(RP# = V
SS ±0.2V)
ICC620 µA
STANDBY OR READ CURRENT: V
PP SUPPLY
(V
PP ≤ 5.5V)
I
PP1±15 µA
DEEP POWER-DOWN CURRENT: V
PP SUPPLY
(RP# = VSS ±0.2V)
I
PP25 µA
