Vishay Siliconix
SUM110P08-11L
New Product
www.vishay.com
2
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 80 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 1 µA
- 85
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 5.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 80 V, V
GS
= 0 V
- 1
µA
V
DS
= - 80 V, V
GS
= 0 V, T
J
= 175 °C
- 500
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= - 10 V
- 120 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 20 A
0.0093 0.0112
V
GS
= - 4.5 V, I
D
= - 15 A
0.0120 0.0145
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 20 A
85 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 40 V, V
GS
= 0 V, f = 1 MHz
10850
pFOutput Capacitance
C
oss
800
Reverse Transfer Capacitance
C
rss
700
Total Gate Charge
Q
g
V
DS
= - 40 V, V
GS
= - 10 V, I
D
= - 110 A
180 270
nC
V
DS
= - 40 V, V
GS
= - 4.5 V, I
D
= - 110 A
85 130
Gate-Source Charge
Q
gs
35
Gate-Drain Charge
Q
gd
42
Gate Resistance
R
g
f = 1 MHz 3.6
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 40 V, R
L
= 0.36
I
D
- 110 A, V
GEN
= - 10 V, R
g
= 1
20 30
ns
Rise Time
t
r
330 500
Turn-Off Delay Time
t
d(off)
135 205
Fall Time
t
f
550 825
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 110
A
Pulse Diode Forward Current
a
I
SM
- 120
Body Diode Voltage
V
SD
I
S
= - 20 A
- 0.8 - 1.5 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 20 A, di/dt = 100 A/µs, T
J
= 25 °C
65 100 ns
Body Diode Reverse Recovery Charge
Q
rr
135 205 nC
Reverse Recovery Fall Time
t
a
43
ns
Reverse Recovery Rise Time
t
b
22
