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SUM110P08-11L-E3

P1-P3P4-P6P7-P8
Vishay Siliconix
SUM110P08-11L
New Product
www.vishay.com
4
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
Power Derating, Junction-to-Case
0 0.3 0.6 0.9 1.2
T
J
= 150 °C
V
SD
- (V)
100
10
1
I
S
- (A)
25 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
1.0
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 1mA
T
J
- (°C)
V
GS(th)
Variance (V)
T
C
Power (W)
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Case (T
C
= 25 °C)
Safe Operating Area
0
0.01
0.02
0.03
0.04
0.05
0.06
0246810
V
GS
- (V)
25 °C
150 °C
R
DS
- on (W )
I
D
= 20 A
Time (s)
0.0001 0.001 0.01 0.10 1
Power (W)
0
1000
2000
3000
4000
5000
6000
Vishay Siliconix
SUM110P08-11L
New Product
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73471
.
Max. Avalanche and Drain Current vs. Case Temperature
0
30
60
90
120
0 25 50 75 100 125 150 175
I
D
- (A)
T
C
- (°C)
Package Limited
Avalanche Current vs. Time
t
in
- (s)
I
D
av - (A)
0.1
1.0
10.0
100.0
1000.0
0.00001 0.0001 0.001 0.01 0.1 1.0
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.01
0.10
1.00
0.2
Normalized Effective Transient Thermal Impedance
0.01
10.0001
0.05
0.02
Single
0.5
0.001
0.1
Package Information
www.vishay.com
Vishay Siliconix
Revison: 30-Sep-13
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D
2
PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1
D4
A
A
e
b2
b
E
A
c2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010
M
A
M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c*
Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1
Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
P1-P3P4-P6P7-P8

SUM110P08-11L-E3

Mfr. #:
Buy SUM110P08-11L-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 80V 110A 375W
Lifecycle:
New from this manufacturer.
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