NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
PTVS12VZ1USKN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 November 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
t
p
= 8/20 µs [1][2] - 2100 WP
PPM
peak pulse power
t
p
= 10/1000 μs [3][2] - 180 W
t
p
= 8/20 µs [1][2] - 65 AI
PPM
peak pulse current
t
p
= 10/1000 μs [3][2] - 10.1 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature -40 125 °C
T
stg
storage temperature -65 150 °C
ESD maximum ratings
IEC 61000-4-2; contact discharge [4][2] - 30 kVV
ESD
electrostatic discharge voltage
IEC 61000-4-2; air discharge [4][2] - 30 kV
[1] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
[2] Measured from pin 1 to pin 2.
[3] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[4] Device stressed with ten non-repetitive ESD pulses.
t
p
(ms)
0 403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
-t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.6 ns to 1 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
