NXP Semiconductors
PTVS12VZ1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
PTVS12VZ1USKN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 November 2015 6 / 13
T
j
(°C)
0 20015050 100
006aab321
0.4
0.8
1.2
P
PPM
0
P
PPM(25°C)
Fig. 6. Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
aaa-020136
T
amb
(°C)
-100 2001000
10
-1
1
10
10
2
I
RM
(nA)
10
-2
Fig. 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
V
CL
(V)
0 20155 10
aaa-020139
15
20
10
5
0
25
30
I
PP
(A)
-5
R
dyn
= 0.1 Ω
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 8. Dynamic resistance with positive clamping
voltage; typical values
V
CL
(V)
-3 0-1-2
aaa-020140
5
I
PP
(A)
-30
-25
-20
-15
-10
-5
0
R
dyn
= 0.08 Ω
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 9. Dynamic resistance with negative clamping
voltage; typical values
