BUK7Y53-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 13 October 2010 3 of 14
NXP Semiconductors
BUK7Y53-100B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ - 100 V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 4
- 24.8 A
T
mb
=100°C; V
GS
= 10 V; see Figure 1 - 17.6 A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 4
-99A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -85W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - 24.8 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 99 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=24.8A; V
sup
≤ 100 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
-81mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2][3]
--J