BUK7Y53-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 13 October 2010 7 of 14
NXP Semiconductors
BUK7Y53-100B
N-channel TrenchMOS standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 9. Forward transconductance as a function of
drain current; typical values.
0
6
12
18
24
30
012345
V
DS
(V)
I
D
(A)
4.8
10
4.6
4.4
4.1
5.0
V
GS
(V) =
003aad632
0
100
200
300
0 5 10 15 20
I
D
(A)
R
DSon
(m
Ω
)
10
4.4
4.8
4.1
5.0
4.6
V
GS
(V) =
0
5
10
15
20
25
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
003aad638
0
5
10
15
20
0 7 14 21 28
I
D
(A)
g
fs
(S)