IRLR/U3802PbF
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.81 1.2 V T
J
= 25°C, I
S
= 12A, V
GS
= 0V
––– 0.65 ––– T
J
= 125°C, I
S
= 12A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 52 78 ns T
J
= 25°C, I
F
= 12A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 50 75 ns T
J
= 125°C, I
F
= 12A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
S
D
G
Diode Characteristics
84
320
A
V
SD
Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 12 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.009 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 6.5 8.5 V
GS
= 4.5V, I
D
= 15A
––– ––– 30 V
GS
= 2.8V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage 0.6 ––– 1.9 V V
DS
= V
GS
, I
D
= 250µA
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C
––– ––– 100
µA
V
DS
= 9.6V, V
GS
= 0V
––– ––– 250 V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -12V
g
fs
Forward Transconductance 31 ––– ––– S V
DS
= 6.0V, I
D
= 12A
Q
g
Total Gate Charge ––– 27 41
Q
gs1
Pre-Vth Gate-Source Charge ––– 3.6 ––– V
DS
= 6.0V
Q
gs2
Post-Vth Gate-Source Charge ––– 2.0 ––– V
GS
= 5.0V
Q
gd
Gate-to-Drain Charge ––– 10 ––– nC I
D
= 6.0A
Q
godr
Gate Charge Overdrive ––– 11 ––– See Fig.16
Q
sw
Switch Charge (Q
gs2
+
Q
gd
) ––– 12 –––
Q
oss
Output Charge ––– 28 ––– nC V
DS
= 10V, V
GS
= 0V
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 6.0V, V
GS
= 4.5V
t
r
Rise Time ––– 14 ––– ns I
D
= 12A
t
d(off)
Turn-Off Delay Time ––– 21 ––– Clamped Inductive Load
t
f
Fall Time ––– 17 –––
C
iss
Input Capacitance ––– 2490 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 2150 ––– pF V
DS
= 6.0V
C
rss
Reverse Transfer Capacitance ––– 530 ––– ƒ = 1.0MHz
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
mΩR
DS(on)
Static Drain-to-Source On-Resistance
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 300 mJ
I
AR
Avalanche Current ––– 20 A
Avalanche Characteristics
