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IRLU3802PBF
P1-P3
P4-P6
P7-P9
P10-P11
IRLR/U3802PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, Dr
ai
n-
to-
Source V
oltage
(
V
)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cos
s
Cr
s
s
Ci
s
s
V
GS
=
0
V,
f
=
1
MH
Z
C
is
s
=
C
gs
+ C
gd
, C
ds
S
H
OR
TE
D
C
rss
= C
gd
C
o
ss
= C
ds
+ C
gd
0
1
02
03
04
0
5
0
Q
G
T
otal
G
at
e Char
ge (
nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
=
12V
I
D
= 6.
0A
0
1
10
100
V
DS
, D
r
ai
n-
toSou
r
c
e V
ol
tage (
V
)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175
°C
S
i
ngl
e Pul
s
e
1ms
ec
10ms
ec
O
PER
AT
I
O
N
I
N
T
H
IS AR
EA
LI
MI
T
ED
BY R
DS
(
on)
100µs
ec
0.0
0.5
1.
0
1.5
2.0
2.5
V
SD
, S
ource-
toD
rai
n Volt
age (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
IRLR/U3802PbF
www.irf.com
5
Fig 10a.
Switching Time Test Circuit
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1E
-
006
1E
-
005
0.
0001
0.
001
0.
01
0.
1
t
1
, R
ec
tangul
a
r
P
uls
e Dur
ati
on (
s
ec
)
0.
001
0.
0
1
0.
1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.
1
0
D =
0.50
0.02
0.01
0.05
SING
LE
P
U
LSE
(
T
H
ER
MA
L R
ESP
O
N
SE )
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (
°C
)
0
20
40
60
80
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
V
GS
V
DS
90%
10%
t
d(
o
n)
t
d(off)
t
f
t
r
V
GS
Puls
e Width < 1µs
Dut
y F
actor
< 0.
1%
V
DD
V
DS
L
D
D.U
.T
IRLR/U3802PbF
6
www.irf.com
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 14.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 13.
Threshold Voltage Vs. Temperature
-7
5
-5
0
-2
5
0
25
50
75
100
125
150
175
T
J
,
T
emper
at
ur
e (
°C )
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 2
50µA
25
50
75
100
125
150
175
St
art
i
ng T
J
, Junct
i
on Temper
at
ure (
°C
)
0
1000
2000
3000
4000
5000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
8.0A
14A
BOTTOM
20A
P1-P3
P4-P6
P7-P9
P10-P11
IRLU3802PBF
Mfr. #:
Buy IRLU3802PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 12V 1 N-CH HEXFET 8.5mOhm 27nC
Lifecycle:
New from this manufacturer.
Delivery:
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