BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 2 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Table 3. Ordering information
Type number Package
Name Description Version
BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
Type number Marking code
[1]
BC847BPN 13*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 220 mW
[2]
- 250 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 400 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
