1999 Jan 22 21
Philips Semiconductors Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Table 4 Component list for Figs 9 and 10; f
i(RF)
= 433.92 MHz
COMPONENT
COMPONENT CHARACTERISTICS
VALUE TOLERANCE
TEMPERATURE
COEFFICIENT
(ppm/K)
LOSS FACTOR
AT 1 MHz
QUALITY
FACTOR
SELF
RESONANCE
FREQUENCY
R20 330 Ω±2% +50 −− −
R40 1.8 kΩ±2% +50 −− −
R41 not placed −− − − −
R50 1.2 kΩ±2% +50 −− −
R51 1.5 kΩ±2% +50 −− −
R60 4.7 kΩ±2% +50 −− −
C10
(1)
2.7 pF ±10% 0 ±30 tan δ≤20 × 10
−4
−−
C11 3 to 10 pF − 0 ±300 tan δ≤20 × 10
−4
−−
C12 100 pF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C20 1 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C21 47 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C22 1 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C30 2.7 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C31 470 pF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C32 47 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C33 10 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C40 1 nF ±10% 0 ±30 tan δ≤20 × 10
−4
−−
C41
(1)
15 pF ±10% 0 ±30 tan δ≤20 × 10
−4
−−
C42 15 pF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C43
(1)
8.2 pF ±10% 0 ±30 tan δ≤20 × 10
−4
−−
C44 1 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C50 3to10pF − 0±300 tan δ≤20 × 10
−4
−−
C51 1 nF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C60
(2)
82 pF ±10% 0 ±30 tan δ≤10 × 10
−4
−−
C61
(2)
5to30pF − 0±300 tan δ≤10 × 10
−4
−−
C70 not placed −− − − −
L10
(3)
8nH ±5% +25 to +125 −≥140 at 150 MHz ≥3 GHz
L40 560 nH ±10% +25 to +125 −≥45 at 100 MHz ≥400 MHz
L41 100 nH ±10% +25 to +125 −≥60 at 350 MHz ≥1 GHz
L50
(3)
8nH ±5% +25 to +125 −≥140 at 150 MHz ≥3 GHz
L51
(3)
8nH ±5% +25 to +125 −≥140 at 150 MHz ≥3 GHz
L60
(2)
2.2 µH ±10% +25 to +125 −≥37 at 7.9 MHz ≥150 MHz
X20 ceramic filter, Murata SFE 10.7 MA 5 A; see note 4
X40 3rd overtone crystal, 70.5367 MHz; see note 5
