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Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
Vishay Siliconix
DG611, DG612, DG613
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
L
= 5 V, V
IN
= 4 V, 1 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
V- = - 5 V, V+ = 12 V Full - 5 7 - 5 7 V
Switch On-Resistance R
DS(on)
I
S
= - 1 mA, V
D
= 0 V
Room
Full
18 45
60
45
60
Resistance Match Bet Ch. R
DS(on)
Room 2
Source Off Leakage I
S(off)
V
S
= 0 V, V
D
= 10 V
Room
Hot
± 0.001 - 0.25
- 20
0.25
20
- 0.25
- 20
0.25
20
nADrain Off Leakage Current I
D(off)
V
S
= 10 V, V
D
= 0 V
Room
Hot
± 0.001 - 0.25
- 20
0.25
20
- 0.25
- 20
0.25
20
Switch On Leakage Current I
D(on)
V
S
= V
D
= 0 V
Room
Hot
± 0.001 - 0.4
- 40
0.4
40
- 0.4
- 40
0.4
40
Digital Control
Input Voltage High V
IH
Full 4 4
V
Input Voltage Low V
IL
Full 1 1
Input Current I
IN
Room
Hot
0.005 - 1
- 20
1
20
- 1
- 20
1
20
µA
Input Capacitance C
IN
Room 5 pF
Dynamic Characteristics
Off State Input Capacitance C
S(off)
V
S
= 0 V Room 3
pFOff State Output Capacitance C
D(off)
V
D
= 0 V Room 2
On State Input Capacitance C
S(on)
V
S
= V
D
= 0 V Room 10
Bandwidth BW R
L
= 50  Room 500 MHz
Tur n - O n T i m e
e
t
ON
R
L
= 300 C
L
= 3 pF
V
S
= ± 2 V,
See test circuit, figure 2
Room 12 25 25
ns
Tur n - O f f T i m e
e
t
OFF
Room 8 20 20
Tur n - O n T i m e t
ON
R
L
= 300 C
L
= 75 pF
V
S
= ± 2 V,
See test circuit, figure 2
Room
Full
19 35
50
35
50
Tur n - O f f T i m e t
OFF
Room
Full
16 25
35
25
35
Charge Injection
e
QC
L
= 1 nF, V
S
= 0 V Room 4
pC
Ch. Injection Change
e,g
QC
L
= 1 nF, |V
S
| 3 V Room 3 4 4
Off Isolation
e
OIRR
R
IN
= 50 R
L
= 50
f = 5 MHz
Room 74
dB
Crosstalk
e
X
TA LK
R
IN
= 10 , R
L
= 50
f = 5 MHz
Room 87
Power Supplies
Positive Supply Current I+
V
IN
= 0 V or 5 V
Room
Full
0.005 1
5
1
5
µA
Negative Supply Current I-
Room
Full
- 0.005 - 1
- 5
- 1
- 5
Logic Supply Current I
L
Room
Full
0.005 1
5
1
5
Ground Current I
GND
Room
Full
- 0.005 - 1
- 5
- 1
- 5
Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
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Vishay Siliconix
DG611, DG612, DG613
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Q =
|Q at V
S
= 3 V - Q at V
S
= - 3 V|.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V
L
= 5 V, V
IN
= 4 V, 1 V
f
Temp.
b
Ty.p
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 7 0 7 V
Switch On-Resistance R
DS(on)
I
S
= - 1 mA, V
D
= 1 V Room 25 60 60
Dynamic Characteristics
Tur n- O n T im e
e
t
ON
R
L
= 300 C
L
= 3 pF
V
S
= 2 V,
See test circuit, figure 2
Room 15 30 30
ns
Turn-Off Time
e
t
OFF
Room 10 25 25
R
DS(on)
vs. V
D
and Power Supply Voltages
R
DS(on)
- Drain-Source On-Resistance ()
- 4 - 2 0 2 4 6 8 10 12 - 5
400
350
300
250
200
150
100
50
0
V
D
- Drain Voltage (V)
V+ = 5 V
V- = - 5 V
V+ = 12 V
V- = - 5 V
V+ = 15 V
V- = - 3 V
I
S
= - 1 mA
Leakage Current vs. Analog Voltage
- 4 - 2 0 2 4 6 8 1 0
3
2
1
0
- 1
- 2
- 3
- Leakage Current (pA)
, I
D
V
D
or V
S
- Drain or Source Voltage (V)
I
S(of f),
I
D(of f)
I
D(on)
V+ = 15 V
V- = - 3 V
I
S
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Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
Vishay Siliconix
DG611, DG612, DG613
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Input Switching Threshold vs. V
L
R
DS(on)
vs. V
D
and Temperature
Leakage Currents vs. Temperature
0 5 10 15
6
5
4
3
2
1
0
V
L
- Logic Supply Voltage (V)
V+ = 15 V
V- = - 3 V
V
TH
- Logic Input Voltage (V)
R
DS(on)
- Drain-Source On-Resistance ()
- 4 - 2 02468 1 0 12
400
350
300
250
200
150
100
50
0
V
D
- Drain Voltage (V)
25 °C
V+ = 15 V
V- = - 3 V
I
S
= - 1 mA
125 °C
- 55 °C
- 55 0 125
Temperature (°C)
- 25 25 50 75 100
10 nA
0.1 pA
100 pA
10 pA
1 pA
I
S(of f),
I
D(of f)
I
D(on)
1 nA
- Leakage (A)I
, I
S(off) D(off)
Switching Times vs. Temperature
Charge Injection vs. Analog Voltage
- 3 dB Bandwidth/Insertion Loss vs. Frequency
16
14
12
10
8
6
4
2
0
24
22
20
18
- 55 - 35 - 15 5 25 45 65 85 105 125
V+ = 15 V
V- = - 3 V
R
L
= 300
C
L
= 10 pF
t
ON
t
OFF
Time (ns)
Temperature (°C)
Charge (pC)
V
ANALO G
- Analog Voltage (V)
20
10
0
- 10
- 20
- 3 - 2 - 1 0123 456 789 1 0
Qd
Qs
V+ = 15 V
V- = - 3 V
Insertion Loss (dB)
1 1 0 100 1000
- 24
- 20
- 16
- 12
- 8
- 4
0
f - Frequency (MHz)
R
L
= 50
- 3 dB Point

DG611DY-T1

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG611EEY-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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