Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
www.vishay.com
7
Vishay Siliconix
DG611, DG612, DG613
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SCHEMATIC DIAGRAM (Typical Channel)
TEST CIRCUITS
Crosstalk and Off Isolation vs. Frequency
1 1 0 100
- 20
- 40
- 60
- 80
- 100
- 120
f - Frequency (MHz)
V+ = 15 V
V- = - 3 V
(dB)
Crosstalk
Of f Isolation
Supply Currents vs. Switching Frequency
Figure 1.
V
L
V+
V-
S
D
DMOS Switch
Level
Translator
Input
Logic
IN
X
Driver
Figure 2. Switching Time
C
L
(includes fixture and stray capacitance)
V
L
R
L
R
L
+ r
DS(on)
V
O
= V
S
V
O
± 2 V
V+
V-
IN
V-
S
GND
R
L
300
D
C
L
+ 15 V + 5 V
50 %
20 %
90 %
t
ON
t
OFF
Logic Input
0 V
5 V
V
S
= ± 2 V
0 V
Switch Output
t
r
< 10 ns
t
f
< 10 ns
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8
Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
Vishay Siliconix
DG611, DG612, DG613
TEST CIRCUITS
APPLICATIONS
High-Speed Sample-and-Hold
In a fast sample-and-hold application, the analog switch
characteristics are critical. A fast switch reduces aperture
uncertainty. A low charge injection eliminates offset (step)
errors. A low leakage reduces droop errors. The CLC111, a
fast input buffer, helps to shorten acquisition and settling
times. A low leakage, low dielectric absorption hold capacitor
must be used. Polycarbonate, polystyrene and
polypropylene are good choices. The JFET output buffer
reduces droop due to its low input bias current.
(see figure 5.)
Pixel-Rate Switch
Windows, picture-in-picture, title overlays are economically
generated using a high-speed analog switch such as the
DG613. For this application the two video sources must be
sync locked. The glitch-less analog switch eliminates halos.
(see figure 6.)
GaAs FET Drivers
Figure 7 illustrates a high-speed GaAs FET driver. To turn
the GaAs FET on 0 V are applied to its gate via S
1
, whereas
to turn it off, - 8 V are applied via S
2
. This high-speed,
low-power driver is especially suited for applications that
require a large number of RF switches, such as phased array
radars.
Figure 3. Charge Injection
C
L
1 nF
D
R
g
V
O
V+
S
V-
5 V
IN
V
L
V
g
- 3 V
GND
+ 15 V+ 5 V
Figure 4. Crosstalk
S
1
D
2
S
2
V
S
1 V, 4 V
V
O
IN
2
R
g
= 50
1 V, 4 V
X
TA L K
Isolation = 20 log
V
S
V
L
V
O
V+
IN
1
50
C = RF bypass
R
L
D
1
- 3 V
GND V-
NC
C
+ 15 V
C
+ 5 V
C
Figure 5. High-Speed Sample-and-Hold
CLC111
75
+
-
LF356
1
/
4
DG611
5 V Control
Analog
Input
Input Buffer
S
IN
D
Output Buffer
± 5 V Output
to A/D
+ 5 V + 12 V
- 5 V
C
HOLD
650 pF Polystyrene
Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
www.vishay.com
9
Vishay Siliconix
DG611, DG612, DG613
APPLICATIONS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70057
.
Figure 6. A Pixel-Rate Switch Creates Title Overlays
+
-
CLC410
75
1
/
2
DG613
Background
D
Output Buffer
Composite
Output
+ 5 V + 12 V
- 5 V
75
Titles
5 V Control
75
250
1
/
2
CLC114
250
Figure 7. A High-Speed GaAs FET Driver that Saves Power
1
/
2
DG613
D
1
+ 5 V
- 8 V
D
2
S
1
S
2
IN
1
IN
2
GND V-
GaAs
RF
IN
RF
OUT
V
L
V+
5 V

DG611DY-T1

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG611EEY-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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