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TFF1024HN/N1,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
TFF1024HN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 13 January 2015 4 of 16
NXP Semiconductors
TFF1024HN
Integrated mixer oscillator PLL for satellite LNB
8. Functional description
8.1 LO frequency selection
[1] For frequencies that cannot be achieved using the 25 MHz crystal choose the closest frequency and adapt the crystal frequency.
Example: 10.45 GHz. This can be achieved by choosing 10.55 GHz. The divider ratio is 422. 10.45 GHz will be achieved with a crystal
frequency of 10.45 GHz / 422 = 24.76303 MHz.
9. Limiting values
10. Recommended operating conditions
Table 4. LO frequency selection table
See Figure 1 for the functional diagram.
f
LO
f
xtal
HB2 HB1 HB0 f
RF
(GHz) f
IF
(MHz)
(GHz) (MHz) (pin 10) (pin 13) (pin 6) Min Max Min Max
9.75 25 0 0 0 10.70 11.90 950 2150
10.00 25 0 0 1 10.95 12.15 950 2150
10.25 25 0 1 0 11.20 12.40 950 2150
10.45
[1]
24.76 0 1 1 11.40 12.60 950 2150
10.55 25 0 1 1 11.50 12.70 950 2150
10.60 25 1 0 0 11.55 12.75 950 2150
10.75 25 1 0 1 11.70 12.85 950 2100
11.25 25 1 1 0 12.20 12.85 950 1600
11.30 25 1 1 1 12.25 12.85 950 1550
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +6 V
V
i
input voltage on pin HB0 0.5 +6 V
on pin HB1 0.5 +6 V
on pin HB2 0.5 +6 V
T
stg
storage temperature 40 +125 C
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input and IF output AC coupled
[1]
4.5 5 5.5 V
V
i
input voltage on pin HB0 0 - 2.7 V
on pin HB1 0 - 2.7 V
on pin HB2 0 - 2.7 V
I
CC(startup)
start-up supply current during 30 ms only at supply power-on 300 - - mA
T
amb
ambient temperature 40 +25 +85 C
Z
0
characteristic impedance - 50 -
f
RF
RF frequency
[2]
10.70 - 12.85 GHz
TFF1024HN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 13 January 2015 5 of 16
NXP Semiconductors
TFF1024HN
Integrated mixer oscillator PLL for satellite LNB
[1] DC values.
[2] See Table 4
for specific values at certain settings of pins HB0, HB1 and HB2.
[3] The minimum LO frequency is specified. See Table 4
for other specific values at certain settings of pins HB0, HB1 and HB2.
[4] The maximum LO frequency is specified. See Table 4
for other specific values at certain settings of pins HB0, HB1 and HB2.
11. Thermal characteristics
12. Characteristics
f
LO
LO frequency HB2 = 0; HB1 = 0; HB0 = 0
[3]
-9.75-GHz
HB2 = 1; HB1 = 1; HB0 = 1
[4]
- 11.30 - GHz
f
IF
IF frequency
[2]
950 - 2150 MHz
C
L(xtal)
crystal load capacitance - 10 - pF
ESR equivalent series resistance - - 40
f
xtal
crystal frequency - 25 - MHz
Table 6. Operating conditions
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-c)
thermal resistance from junction to case 35 K/W
Table 8. Characteristics
9.75 GHz
f
LO
11.30 GHz; operating conditions of Table 6 apply.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current RF input and IF output AC coupled
[1]
- 5670mA
n(itg)RMS
RMS integrated phase noise
density
loop bandwidth = crossover bandwidth; low ESR
crystal used (ESR < 20 )
integration offset frequency = 1 kHz to 1 MHz - 1.2 2.2 deg
integration offset frequency = 10 kHz to 13 MHz - 1.2 2.2 deg
NF
SSB
single sideband noise figure f
IF
= 1450 MHz; T
amb
= 25 C
f
LO
= 9.75 GHz - 8.8 10.8 dB
10.55 GHz f
LO
10.60 GHz - 9.0 11.0 dB
f
IF
= 1250 MHz; T
amb
= 25 C
11.25 GHz f
LO
11.30 GHz - 9.5 11.5 dB
G
conv
conversion gain f
IF
= 1450 MHz
f
LO
= 9.75 GHz 29.6 34.1 38.6 dB
f
LO
= 10.00 GHz 29.5 34.0 38.5 dB
f
LO
= 10.25 GHz 29.5 34.0 38.5 dB
f
LO
= 10.55 GHz 29.8 34.3 38.8 dB
f
LO
= 10.60 GHz 29.8 34.3 38.8 dB
f
LO
= 10.75 GHz 30.2 34.7 39.2 dB
f
IF
= 1250 MHz
f
LO
= 11.25 GHz 30.2 34.7 39.2 dB
f
LO
= 11.30 GHz 30.1 34.6 39.1 dB
TFF1024HN All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 13 January 2015 6 of 16
NXP Semiconductors
TFF1024HN
Integrated mixer oscillator PLL for satellite LNB
[1] DC values.
[2] See Table 4
for the corresponding f
IF
ranges.
G
conv
/f conversion gain variation
with frequency
over IF band; 40 C T
amb
+85 C; V
CC
= 5.0 V
f
LO
= 9.75 GHz
[2]
--2.5dB
f
LO
= 10.00 GHz
[2]
--3.0dB
f
LO
= 10.25 GHz
[2]
--3.6dB
f
LO
= 10.55 GHz
[2]
--4.0dB
f
LO
= 10.60 GHz
[2]
--4.0dB
f
LO
= 10.75 GHz
[2]
--4.0dB
f
LO
= 11.25 GHz
[2]
--3.0dB
f
LO
= 11.30 GHz
[2]
--3.0dB
in every 36 MHz band; 40 C T
amb
+85 C;
V
CC
= 5.0 V
--0.6dB
s
11
input reflection coefficient 10.70 GHz f
RF
12.85 GHz - 10 - dB
s
22
output reflection coefficient 950 MHz f
IF
2150 MHz; Z
0
=75 - 10 - dB
IP3
o
output third-order
intercept point
carrier power is 10 dBm (measured at the output)
f
IF
= 1450 MHz; 9.75 GHz f
LO
10.75 GHz 14 18 - dBm
f
IF
= 1250 MHz; 11.25 GHz f
LO
11.30 GHz 14 18 - dBm
P
L(1dB)
output power at 1 dB
gain compression
measured at the output
f
IF
= 1450 MHz; 9.75 GHz f
LO
10.75 GHz 2 6 - dBm
f
IF
= 1250 MHz; 11.25 GHz f
LO
11.30 GHz 2 6 - dBm
L(RF)lo
local oscillator RF leakage f
c
=f
LO
; span = 100 MHz; RBW = 50 kHz;
VBW = 200 kHz
--35 dBm
V
IL
LOW-level input voltage on pin HB0 - - 0.8 V
on pin HB1 - - 0.8 V
on pin HB2 - - 0.8 V
V
IH
HIGH-level input voltage on pin HB0 1.6 - 2.7 V
on pin HB1 1.6 - 2.7 V
on pin HB2 1.6 - 2.7 V
R
pu
pull-up resistance on pin HB0 80 110 140 k
on pin HB1 80 110 140 k
on pin HB2 80 110 140 k
Table 8. Characteristics
…continued
9.75 GHz
f
LO
11.30 GHz; operating conditions of Table 6 apply.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

TFF1024HN/N1,135

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