Document Number: 91032
www.vishay.com
S11-1047-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
()V
GS
= 10 V 0.40
Q
g
(Max.) (nC) 43
Q
gs
(nC) 7.0
Q
gd
(nC) 23
Configuration Single
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3
a
SiHF630STRR-GE3
a
Lead (Pb)-free
IRF630SPbF IRF630STRLPbF
a
IRF630STRRPbF
a
SiHF630S-E3 SiHF630STL-E3
a
SiHF630STR-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
9.0
AT
C
= 100 °C 5.7
Pulsed Drain Current
a
I
DM
36
Linear Derating Factor 0.59
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
250 mJ
Repetitive Avalanche Current
a
I
AR
9.0 A
Repetitive Avalanche Energy
a
E
AR
7.4 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
74
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 3.0
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dt
c
dV/dt 5.0 V/ns