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IRF630SPBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91032
4 S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20 µs Pulse Width
V
DS
= 50 V
10
1
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91032_03
I
D
= 5.9 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91032_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1600
1200
800
0
400
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91032_05
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
10
50
4030
20
For test circuit
see figure 13
91032_06
I
D
= 5.9 A
V
DS
= 160 V
V
DS
= 40 V
V
DS
= 100 V
Document Number: 91032 www.vishay.com
S11-1047-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.5
1.3
1.10.90.7
25 °C
150 °C
V
GS
= 0 V
91032_07
1.5
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0
2
4
6
8
10
25 1501251007550
91032_09
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
www.vishay.com Document Number: 91032
6 S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0 − 0.5
0.2
0.1
0.05
0.02
0.01
91032_11
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
600
0
100
200
300
400
500
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
4.0 A
5.7 A
9.0 A
V
DD
= 50 V
91032_12c
P1-P3P4-P6P7-P9

IRF630SPBF

Mfr. #:
Buy IRF630SPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 200V HEXFET MOSFET D2-PA
Lifecycle:
New from this manufacturer.
Delivery:
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