1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz
Output power at 1 dB gain compression = 1 dBm
Supply current = 10.5 mA at a supply voltage of 3.3 V
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 4 dB at 950 MHz
Unconditionally stable (K > 1)
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2800
MMIC wideband amplifier
Rev. 5 — 13 July 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN

V\P

BGA2800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 2 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2800 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2800 *E7 * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +5.0 V
I
CC
supply current - 55 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - +10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.0 3.3 3.6 V
I
CC
supply current 8.8 10.5 12.1 mA
BGA2800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 3 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
G
p
power gain f = 250 MHz 19.4 19.9 20.5 dB
f = 950 MHz 19.8 20.5 21.2 dB
f = 2150 MHz 18.7 20.2 21.7 dB
RL
in
input return loss f = 250 MHz 19 21 23 dB
f = 950 MHz 192123dB
f = 2150 MHz 10 15 22 dB
RL
out
output return loss f = 250 MHz 15 19 24 dB
f = 950 MHz 161718dB
f = 2150 MHz 15 17 20 dB
ISL isolation f = 250 MHz 46 67 87 dB
f = 950 MHz 444647dB
f = 2150 MHz 35 37 40 dB
NF noise figure f = 250 MHz 3.2 3.7 4.2 dB
f = 950 MHz 3.1 3.6 4.0 dB
f = 2150 MHz 3.3 3.7 4.2 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 2.9 3.2 3.5 GHz
K Rollett stability factor f = 250 MHz 49 105 160
f = 950 MHz 8 9 10
f = 2150 MHz 2.8 3.4 4.0
P
L(sat)
saturated output power f = 250 MHz 1 1 2 dBm
f = 950 MHz 0 1 3 dBm
f = 2150 MHz 20 +1dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 2 10 dBm
f = 950 MHz 2 10 dBm
f = 2150 MHz 3 2 1dBm
IP3
I
input third-order intercept point P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 11 9 7dBm
f
1
= 950 MHz; f
2
= 951 MHz 12 10 7dBm
f
1
=2150MHz; f
2
=2151MHz 15 12 9dBm
IP3
O
output third-order intercept point P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 9 11 13 dBm
f
1
= 950 MHz; f
2
= 951 MHz 9 11 13 dBm
f
1
=2150MHz; f
2
= 2151 MHz 5 8 11 dBm
P
L(2H)
second harmonic output power P
drive
= 34 dBm
f
1H
= 250 MHz; f
2H
=500MHz 62 60 58 dBm
f
1H
= 950 MHz; f
2H
=1900MHz 51 49 48 dBm
IM2 second-order intermodulation distance P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 425364dBc
f
1
= 950 MHz; f
2
=951MHz 445567dBc
Table 6. Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2800,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.7 dB 3.3V 10.5mA 3.2GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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