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BGA2800,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 10 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 21 21 21 dBm
V
CC
=3.3V 20 20 20 dBm
V
CC
=3.6V 20 20 20 dBm
f = 950 MHz
V
CC
=3.0V 21 21 21 dBm
V
CC
=3.3V 20 20 20 dBm
V
CC
=3.6V 20 20 20 dBm
f = 2150 MHz
V
CC
=3.0V 21 21 22 dBm
V
CC
=3.3V 21 21 22 dBm
V
CC
=3.6V 20 21 22 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 3 3 3dBm
V
CC
=3.3V 1 1 1dBm
V
CC
=3.6V 0 0 1dBm
f = 950 MHz
V
CC
=3.0V 3 3 3dBm
V
CC
=3.3V 1 1 2dBm
V
CC
=3.6V 0 0 1dBm
f = 2150 MHz
V
CC
=3.0V 3 3 4dBm
V
CC
=3.3V 1 2 3dBm
V
CC
=3.6V 0 1 3dBm
BGA2800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 11 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(sat)
saturated output power f = 250 MHz
V
CC
=3.0V 1 1 1dBm
V
CC
=3.3V 111dBm
V
CC
=3.6V 222dBm
f = 950 MHz
V
CC
=3.0V 1 1 1dBm
V
CC
=3.3V 211dBm
V
CC
=3.6V 322dBm
f = 2150 MHz
V
CC
=3.0V 1 1 3dBm
V
CC
=3.3V 1 0 2dBm
V
CC
=3.6V 1 0 1dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 36 dBm
V
CC
=3.0V 40 51 49 dBc
V
CC
=3.3V 52 53 46 dBc
V
CC
=3.6V 58 50 45 dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
= 36 dBm
V
CC
=3.0V 38 47 52 dBc
V
CC
=3.3V 48 55 46 dBc
V
CC
=3.6V 55 51 44 dBc
BGA2800 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 12 of 18
NXP Semiconductors
BGA2800
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IP3
O
output third-order intercept point f
1
=250MHz;
f
2
=251MHz;
P
drive
= 36 dBm
V
CC
=3.0V 9 9 8 dBm
V
CC
=3.3V 12 11 10 dBm
V
CC
=3.6V 14 12 11 dBm
f
1
=950MHz;
f
2
=951MHz;
P
drive
= 36 dBm
V
CC
=3.0V 10 9 8 dBm
V
CC
=3.3V 12 11 10 dBm
V
CC
=3.6V 13 12 11 dBm
f
1
=2150MHz;
f
2
=2151MHz;
P
drive
= 36 dBm
V
CC
=3.0V 8 7 5 dBm
V
CC
=3.3V 10 8 6 dBm
V
CC
=3.6V 11 9 7 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
B
3dB
3 dB bandwidth V
CC
= 3.0 V 3.287 3.198 3.082 GHz
V
CC
= 3.3 V 3.240 3.162 3.055 GHz
V
CC
= 3.6 V 3.226 3.144 3.034 GHz
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BGA2800,115

Mfr. #:
Buy BGA2800,115
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.7 dB 3.3V 10.5mA 3.2GHz
Lifecycle:
New from this manufacturer.
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