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2SK3377-Z-E1-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D14328EJ5V0DS
2
2SK3377
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance
Note
| y
fs | VDS = 10 V, ID = 10 A 5 10 S
Drain to Source On-state Resistance
Note
R
DS(on)1 VGS = 10 V, ID = 10 A 35 44 mΩ
RDS(on)2 VGS = 4.0 V, ID = 10 A 54 78 mΩ
Input Capacitance Ciss VDS = 10 V 760 pF
Output Capacitance Coss VGS = 0 V 150 pF
Reverse Transfer Capacitance Crss f = 1 MHz 71 pF
Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A 13 ns
Rise Time tr VGS = 10 V 170 ns
Turn-off Delay Time td(off) RG = 10 Ω 43 ns
Fall Time tf 34 ns
Total Gate Charge QG VDD = 48 V 17 nC
Gate to Source Charge QGS VGS = 10 V 3.0 nC
Gate to Drain Charge QGD ID = 20 A 4.7 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 20 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 20 A, VGS = 0 V 39 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 62 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14328EJ5V0DS
3
2SK3377
TYPICAL CHARACTERISTICS (TA = 25°C)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10
100
R
th(ch-C)
= 4.17 ˚C/W
μ
μ
R
th(ch-A)
= 125 ˚C/W
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
100
80
60
40
20
0
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
0
0
8020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
5
10
15
20
25
35
30
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1 10 100
T
C
= 25˚C
Single Pulse
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V )
ID(DC)
PW = 10 μs
100 μs
1 ms
0.1
DC
Power Dissipation
Limited
10
ms
Data Sheet D14328EJ5V0DS
4
2SK3377
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1234
5
6
V
DS
= 10 V
10
1
0.1
100
1000
T
A
= −55˚C
25˚C
75˚C
150˚C
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
234
20
50
40
30
10
V
GS
=10 V
10
4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1 1 10 100
10
100
0.01
0.1
1
T
A
= 150˚C
75˚C
25˚C
−50˚C
DRAIN TO SOURCE ON-STATE RESISTANCE v
s.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
02468101214161820
40
50
0
100
60
20
10
30
80
70
90
I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
1010.1
10
20
30
40
50
60
70
80
100
Pulsed
0
VGS = 4.0 V
10 V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch - Channel Temperature - ˚C
V
GS(th)
- Gate to Source Threshold Voltage - V
0.5
VDS = 10 V
I
D = 1 mA
1.0
1.5
2.0
2.5
3.0
−50
0 50 100 150
0
P1-P3P4-P6P7-P9P10-P10

2SK3377-Z-E1-AZ

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