2SK3377-Z-E1-AZ

Data Sheet D14328EJ5V0DS
5
2SK3377
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
1.5
V
SD
- Source to Drain Voltage - V
0.50
Pulsed
0.01
0.1
1
10
100
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1 10 100
1000
100
μ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
50
20
40
60
0 50 100 150
I
D
= 10 A
80
100
120
10 V
V
GS
= 4.0 V
Pulsed
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
10.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10 Ω
<R>
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0812
4
16 20 24 28 32
20
40
60
80
V
DS
16
14
12
10
8
6
4
2
V
GS
I
D
= 20 A
V
DD
= 48 V
30 V
12 V
Data Sheet D14328EJ5V0DS
6
2SK3377
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
1
10
100
1
m10
m
V
DD = 30
V
R
G = 25 Ω
V
GS = 20
V
0
V
IAS = 15
A
10
μ
100
μ
0.1
E
AS
=
23
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50
75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 30 V
R
G
= 25 Ω
V
GS
= 20 V 0 V
I
AS
15 A
Data Sheet D14328EJ5V0DS
7
2SK3377
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
213
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.27.0 MIN.
13.7 MIN.
2.32.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
123
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
0.5 ±0.1
5.6 ±0.3
9.5 ±0.5
2.5 ±0.5
1.0 ±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
Note
0.4 MIN.
0.5 TYP.
0.15 ±0.15
2.3 ±0.3 2.3 ±0.3
5.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.

2SK3377-Z-E1-AZ

Mfr. #:
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Description:
TRANSISTOR
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