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IXGT39N60BD1

P1-P3P4-P5
© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 1 MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C76A
I
C90
T
C
= 90°C39A
I
CM
T
C
= 25°C, 1 ms 152 A
SSOA V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22 Ω I
CM
= 76 A
(RBSOA) Clamped inductive load @ 0.8 V
CES
P
C
T
C
= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) TO-247 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
DS97548A(02/03)
HiPerFAST
TM
IGBT IXGH39N60B V
CES
= 600 V
IXGH39N60BD1 I
C25
= 76 A
IXGT39N60B V
CE(sat)
= 1.7 V
IXGT39N60BD1 t
fi
= 200 ns
Features
z
International standard packages
JEDEC TO-247 AD & TO-268
z
High current handling capability
z
Newest generation HDMOS
TM
process
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Very fast switching speeds for high
frequency applications
Preliminary data
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
I
C
= 250 µA, V
GE
= 0 V 39N60B 600 V
I
C
= 750 µA 39N60BD1 600
V
GE(th)
I
C
= 250 µA, V
CE
= V
GE
39N60B 2.5 5.0 V
I
C
= 500 µA 39N60BD1 2.5 5.0 V
I
CES
V
CE
= 0.8 • V
CES
T
J
= 25°C 39N60B 200 µA
V
GE
= 0 V T
J
= 125°C 39N60B 1 mA
T
J
= 125°C 39N60BD1 3 mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V ±100 nA
V
CE(sat)
I
C
= I
90
, V
GE
= 15 V 1.7 V
(D1)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
G
C
E
TO-247 AD
(IXGH)
C (TAB)
G
E
C (TAB)
TO-268
(IXGT)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 19 28 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
2750 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 39N60B 200 pF
39N60BD1 240 pF
C
res
50 pF
Q
G
110 150 nC
Q
GE
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25 35 nC
Q
GC
40 75 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
250 500 ns
t
fi
200 360 ns
E
off
4.0 6.0 mJ
t
d(on)
25 ns
t
ri
30 ns
E
on
0.3 mJ
t
d(off)
360 ns
t
fi
350 ns
E
off
6.0 mJ
R
thJC
0.62 K/W
R
thCK
0.25 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7 Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7 Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Symbol Test Conditions min. typ. max.
V
F
I
F
= I
C90
, V
GE
= 0 V, Pulse test T
J
=150°C 1.6 V
t ≤ 300 µs, duty cycle d ≤ 2 % T
J
= 25°C 2.5 V
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/µs6A
t
rr
V
R
= 100 V T
J
= 100°C 100 ns
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V T
J
= 25°C25 ns
R
thJC
0.9 K/W
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
© 2003 IXYS All rights reserved
Fig. 1. Saturation Voltage
Characteristics @ 25 Deg. C
0
5
10
15
20
25
30
35
40
0.4 0.8 1.2 1.6 2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
=15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output
Characteristics @ 25 Deg. C
0
20
40
60
80
100
120
140
160
012345
V
CE
- Volts
I
C
- Amperes
V
GE
=15V
13V
11V
9V
7V
5V
Fig. 3. Saturation Voltage
Characteristics @ 125 Deg. C
0
20
40
60
80
100
012345
V
CE
- Volts
I
C
- Amperes
V
GE
=15V
13V
11V
9V
7V
5V
Fig. 4. Temperature Dependence of
V
CE(SAT)
0.7
0.85
1
1.15
1.3
1.45
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(SAT)
- Normalized
I
C
=78A
I
C
=39A
I
C
=19.5A
Fig. 5. BV
CES
& V
(GE)TH
vs. Junction
Temperature
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV
CES
& V
(GE)TH
- Normalized
V
GE(TH)
BV
CES
Fig. 6. Admittance
0
20
40
60
80
100
456789
V
GE
- Volts
I
C
- Amperes
T
J
= 125
°
C
25
°
C
-40
°
C
IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
P1-P3P4-P5

IXGT39N60BD1

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IGBT 600V 76A 200W TO268
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