IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Fig. 12. Transient Thermal Response
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(TH)JC
(C/W)
Fig. 11. Gate Charge
0
3
6
9
12
15
0 20406080100120
Q
G
- nanocoulombs
V
CE
- Volts
V
CE
=300V
I
C
=20A
I
G
=10mA
Fig. 7. Transconductance
0
10
20
30
40
50
0 20406080100120
I
C
- Amperes
G
FS
- Siemens
T
J
= -40
º
C
25ºC
125ºC
Fig. 8. Dependence of E
OFF
on I
C
2
4
6
8
10
12
14
16
10 30 50 70 90
I
C
- Amperes
E
OFF
- millijoules
R
G
= 5 Ohms
R
G
= 56 Ohms
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 480V
Fig. 9. Dependence of E
OFF
on R
G
0
2
4
6
8
10
12
14
16
0 102030405060
R
G
- Ohms
E
OFF
- millijoules
I
C
= 19.5A
I
C
= 39A
I
C
= 78A
T
J
= 125º C
V
GE
= 15V
V
CE
= 480V
Fig. 10. Dependence of E
OFF
on
Temperature
0
3
6
9
12
15
18
0 25 50 75 100 125 150
T
J
- Degrees Centigrades
E
OFF
- milliJoules
I
C
=
78A
I
C
=
39A
I
C
=
19.5A
Solid lines - R
G
= 5 Ohms
Das hed lines - R
G
= 56 Ohms
V
GE
= 15V
V
CE
= 480V
