OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TRD236DT4

P1-P3P4-P6P7-P9P10-P12
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
June 2011 Doc ID 018985 Rev 1 1/12
12
TRD236D
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode
Applications
■ Electronic ballast for fluorescent lighting
■ Electronic transformer for halogen lamps
Description
This device is an NPN power transistor
manufactured using high voltage multi epitaxial
planar technology for high switching speeds. It
uses a cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining a satisfactory RBSOA.
Figure 1. Internal schematic diagram
TO-252 (DPAK)
1
3
Table 1. Device summary
Part number Marking Package Packaging
TRD236DT4 TRD236D TO-252 Tape and reel
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents TRD236D
2/12 Doc ID 018985 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
TRD236D Electrical ratings
Doc ID 018985 Rev 1 3/12
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10 µs)
V
(BR)EBO
V
I
C
Collector current (I
C
= 0) 4 A
I
CM
Collector peak current (t
P
< 5 ms) 8 A
I
B
Base current 2 A
I
BM
Base peak current (t
P
< 5 ms) 4 A
P
tot
Total dissipation at T
c
≤ 25 °C 35 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12

TRD236DT4

Mfr. #:
Buy TRD236DT4
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High Voltage NPN 700V VCES 400V VCEO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet