Electrical characteristics TRD236D
4/12 Doc ID 018985 Rev 1
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0 )
V
CE
= 700 V
V
CE
= 700 V T
C
= 125 °C
0.1
0.5
mA
mA
I
CEO
Collector cut-off current
(I
B
= 0 )
V
CE
= 400 V
0.25 mA
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 10 mA
918V
V
CEO(sus)
(1)
1. Pulsed duration = 300 ms, duty cycle 1.5%
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 10 mA
400 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 0.8 A __ I
B
= 0.1 A
I
C
= 2.5 A _ I
B
= 0.6 A
1.1
1.3
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 1 A __ I
B
= 0.2 A
I
C
= 2.5 A __ I
B
= 0.5 A
1.2
1.3
V
V
h
FE
DC current gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 2.5 A V
CE
= 5 V
10
828
t
s
t
f
Inductive load
Storage time
Fall time
V
CC
= 200 V I
C
= 2 A
I
B1
= 0.4 A V
BE(off)
= -5 V
R
BB
= 0 Ω L = 200 µH
(see Figure 13)
0.6
0.1
µs
µs
V
F
Diode forward voltage
I
F
= 2 A
2.5 V
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TRD236D Electrical characteristics
Doc ID 018985 Rev 1 5/12
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (V
CE
= 1.5 V) Figure 5. DC current gain (V
CE
= 5 V)
Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage
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Electrical characteristics TRD236D
6/12 Doc ID 018985 Rev 1
Figure 8. Inductive load fall time Figure 9. Inductive load storage time
Figure 10. Resistive load fall time Figure 11. Resistive load storage time
Figure 12. Reverse biased operating area
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TRD236DT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High Voltage NPN 700V VCES 400V VCEO
Lifecycle:
New from this manufacturer.
Delivery:
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