IXTK550N055T2 Datasheet IXTX550N055T2, IXTK550N055T2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C55V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 55 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C (Chip Capability) 550 A

I

L(RMS)

External Lead Current Limit 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

1375 A

I

A

T

C

= 25°C 200 A

E

AS

T

C

= 25°C3J

P

D

T

C

= 25°C 1250 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 55 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 10 μA

T

J

= 150°C 1 mA

R

DS(on)

V

GS

= 10V, I

D

= 100A, Notes 1 & 2 1.6 mΩ

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXTK550N055T2

IXTX550N055T2

V

DSS

= 55V

I

D25

= 550A

R

DS(on)

≤≤

≤

1.6m

ΩΩ

Ω

DS100217(11/09)

Features

z

International Standard Packages

z

High Current Handling Capability

z

Fast Intrinsic Diode

z

Avalanche Rated

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters and Off-Line UPS

z

Primary-Side Switch

z

High Speed Power Switching

Applications

TrenchT2

TM

GigaMOS

TM

Power MOSFET

Advance Technical Information

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXTX)

TO-264 (IXTK)

S

G

D

Tab

G

S

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK550N055T2

IXTX550N055T2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 90 150 S

C

iss

40 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 4970 pF

C

rss

1020 pF

R

GI

Gate Input Resistance 1.36 Ω

t

d(on)

45 ns

t

r

40 ns

t

d(off)

90 ns

t

f

230 ns

Q

g(on)

595 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

DSS

150 nC

Q

gd

163 nC

R

thJC

0.12 °C/W

R

thCS

0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 550 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1700 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.2 V

t

rr

100 ns

I

RM

5 A

Q

RM

250 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 200A

R

G

= 1Ω (External)

I

F

= 100A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 27.5V

Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Includes lead resistance.

TO-264 (IXTK) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247

TM

(IXTX) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXTK550N055T2

IXTX550N055T2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

0.0 0.1 0.2 0.3 0.4 0.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

4V

7V

5V

6V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

50

100

150

200

250

300

350

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5

V

6

V

4V

Fig. 4. Normalized R

DS(on)

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

< 550A

Fig. 5. Normalized R

DS(on)

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0 50 100 150 200 250 300 350 400

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

400

0.0 0.5 1.0 1.5 2.0 2.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

4V

5V

10V

8V

7V

6V

IXTK550N055T2

IXTK550N055T2

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