OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXTK550N055T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK550N055T2
IXTX550N055T2
Fig. 7. Input Admittance
0
50
100
150
200
250
300
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 50 100 150 200 250 300
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 27.5V
I
D
= 275A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1.0
10.0
100.0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10,000
0110100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100ms
External Lead Limit
DC
25µs
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK550N055T2
IXTX550N055T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
32
34
36
38
40
42
44
46
48
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 27.5V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
350
400
1 1.5 2 2.5 3 3.5 4 4.5 5
R
G
- Ohms
t
r
- Nanoseconds
0
15
30
45
60
75
90
105
120
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
0
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
90
100
110
120
130
140
150
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A
I
D
= 100A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
0
50
100
150
200
250
300
350
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 27.5V
T
J
= 25ºC
T
J
= 125ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
32
34
36
38
40
42
44
46
48
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
1 1.5 2 2.5 3 3.5 4 4.5 5
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK550N055T2
IXTX550N055T2
IXYS REF:T_550N055T2(V9)12-07-09
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
P1-P3P4-P6

IXTK550N055T2

Mfr. #:
Buy IXTK550N055T2
Manufacturer:
Description:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet