IRLI540NPbF
4 2017-04-27
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
0
1000
2000
3000
110100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 20406080100
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
V = 80V
V = 50V
V = 20V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 13
I = 18A
D
1
10
100
1000
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
T = 175°C
J
1
10
100
1000
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPE RATION IN THIS ARE A LIMITE D
BY R
D
DS(on)
10µs
100µs
1ms
10ms
T = 25°C
T = 175°C
Single Pulse
C
J