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BF861C,215

P1-P3P4-P6P7-P9P10-P12P13-P14
1. Product profile
1.1 General description
N-channel symmetrical junction field effect transistors in a SOT23 package.
1.2 Features and benefits
1.3 Applications
Preamplifiers for AM tuners in car radios.
1.4 Quick reference data
BF861A; BF861B; BF861C
N-channel junction FETs
Rev. 5 — 15 September 2011 Product data sheet
SOT23
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against
static discharge during transport or handling.
MSC895
High transfer admittance Low input capacitance
Low feedback capacitance Low noise.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage
(DC)
--25V
I
DSS
drain current
BF861A V
GS
=0V; V
DS
=8V 2 - 6.5 mA
BF861B V
GS
=0V; V
DS
=8V 6 - 15 mA
BF861C V
GS
=0V; V
DS
=8V 12 - 25 mA
P
tot
total power dissipation up to T
amb
=25C--250mW
y
fs
forward transfer
admittance;
BF861A V
GS
=0V; V
DS
=8V 12 - 20 mS
BF861B V
GS
=0V; V
DS
=8V 16 - 25 mS
BF861C V
GS
=0V; V
DS
=8V 20 - 30 mS
C
iss
input capacitance f = 1 MHz - - 10 pF
C
rss
reverse transfer
capacitance
f=1MHz - - 2.7 pF
BF861A_BF861B_BF861C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 15 September 2011 2 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
2. Pinning information
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
[1] Device mounted on an FR4 printed-circuit board.
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
1source
2drain
3gate
12
3
sym053
1
23
Table 3. Ordering information
Type
number
Package
Name Description Version
BF861A - plastic surface mounted package; 3 leads SOT23
BF861B - plastic surface mounted package; 3 leads SOT23
BF861C - plastic surface mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
BF861A 28*
BF861B 29*
BF861C 30*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) - 25 V
V
GSO
gate-source voltage open drain - 25 V
V
DGO
drain-gate voltage (DC) open source - 25 V
I
G
forward gate current (DC) - 10 mA
P
tot
total power dissipation up to T
amb
=25C
[1]
-250mW
T
stg
storage temperature 65 +150 C
T
j
operating junction
temperature
-150C
BF861A_BF861B_BF861C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 15 September 2011 3 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
6. Thermal characteristics
[1] Device mounted on an FR4 printed-circuit board.
7. Characteristics
Fig 1. Power derating curve.
T
amb
(°C)
0 15010050
mrc166
100
200
300
P
tot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction
to ambient
[1]
500 K/W
Table 7. Characteristics
T
j
=25
C; V
DS
=8V; V
GS
= 0 V unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)GSS
gate-source
breakdown voltage
I
G
= 1 A 25--V
V
GSoff
gate-source cut-off
voltage
BF861A I
D
=1A 0.2 - 1V
BF861B I
D
=1A 0.5 - 1.5 V
BF861C I
D
=1A 0.8 - 2V
V
GSS
gate-source forward
voltage
V
DS
=0V; I
G
=1mA --1V
I
DSS
drain current
BF861A 2 - 6.5 mA
BF861B 6 - 15 mA
BF861C 12 - 25 mA
I
GSS
gate cut-off current V
GS
= 20 V;
V
DS
=0V
--1nA
P1-P3P4-P6P7-P9P10-P12P13-P14

BF861C,215

Mfr. #:
Buy BF861C,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 25V 10mA
Lifecycle:
New from this manufacturer.
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