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BF861C,215

P1-P3P4-P6P7-P9P10-P12P13-P14
BF861A_BF861B_BF861C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 15 September 2011 4 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
y
fs
forward transfer
admittance
BF861A 12 - 20 mS
BF861B 16 - 25 mS
BF861C 20 - 30 mS
g
os
common source
output conductance
BF861A - - 200 S
BF861B - - 250 S
BF861C - - 300 S
C
iss
input capacitance f = 1 MHz - - 10 pF
C
rss
reverse transfer
capacitance
f=1MHz - 2.1 2.7 pF
V
n
/B equivalent input noise
voltage
V
GS
=0V; f=1MHz -1.5-nV/Hz
Table 7. Characteristics
…continued
T
j
=25
C; V
DS
=8V; V
GS
= 0 V unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
DS
=8V. V
DS
=8V.
V
GS
=0V.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values.
Fig 3. Common-source output conductance as a
function of drain current; typical values.
V
GSoff
(V)
0 −2−1.5−0.5 −1
mbd461
10
20
30
I
DSS
(mA)
0
I
DSS
(mA)
0252010 155
mbd462
100
200
300
g
os
(μS)
0
BF861A_BF861B_BF861C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 15 September 2011 5 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
V
DS
=8V.
V
GS
=0V.
V
DS
=8V.
Fig 4. Forward transfer admittance as a function of
drain current; typical values.
Fig 5. Forward transfer admittance as a function of
drain current; typical values.
I
DSS
(mA)
0252010 155
mbd463
10
20
30
|y
fs
|
(mS)
0
I
D
(mA)
02015510
mbd464
10
15
5
20
25
|y
fs
|
(mS)
0
BF861C
BF861B
BF861A
V
DS
=8V. V
DS
=8V.
(1) V
GS
=0V.
(2) V
GS
= 100 mV.
(3) V
GS
= 200 mV.
(4) V
GS
= 300 mV.
Fig 6. Typical input characteristics; BF861A. Fig 7. Typical output characteristics: BF861A.
V
GS
(V)
−10−0.2−0.6 −0.4−0.8
mbd465
2
3
1
4
5
I
D
(mA)
0
V
DS
(V)
0108462
mbd466
2
3
1
4
5
I
D
(mA)
0
(1)
(2)
(3)
(4)
BF861A_BF861B_BF861C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 15 September 2011 6 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
V
DS
=8V. V
DS
=8V.
(1) V
GS
=0V.
(2) V
GS
= 100 mV.
(3) V
GS
= 200 mV.
(4) V
GS
= 300 mV.
(5) V
GS
= 400 mV.
(6) V
GS
= 500 mV.
Fig 8. Typical input characteristics; BF861B. Fig 9. Typical output characteristics; BF861B.
V
GS
(V)
−10−0.2−0.6 −0.4−0.8
mbd467
4
6
2
8
10
I
D
(mA)
0
V
DS
(V)
0108462
mbd468
4
6
2
8
10
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
P1-P3P4-P6P7-P9P10-P12P13-P14

BF861C,215

Mfr. #:
Buy BF861C,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 25V 10mA
Lifecycle:
New from this manufacturer.
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