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MUBW75-17T8

P1-P3P4-P6P7-P8
© 2009 IXYS All rights reserved
4 - 8
20090826a
MUBW 75-17 T8
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
B
25/50
T=25°C 4.75 5.0
3375
5.25 kΩ
K
Module
Symbol Conditions Maximum Ratings
T
VJ
T
JM
T
stg
operating -40...+125
+150
-40...+125
°C
°C
°C
V
ISO
I
ISOL
<1mA;50/60Hz;1min. 3400 V~
M
d
Mountingtorque(M5) 3-6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
therm-chip
Resistanceterminaltochip 7 mW
d
S
d
A
Creepagedistanceonsurface
Strikedistanceinair
12.7
9.6
mm
mm
R
thCH
withheatsinkcompound 0.01 K/W
Weight
300 g
Dimensions in mm (1 mm = 0.0394")
© 2009 IXYS All rights reserved
5 - 8
20090826a
MUBW 75-17 T8
IXYS reserves the right to change limits, test conditions and dimensions.
20 40 60 80 100 120 140 160
0.01 0.1 1
0
100
200
300
400
500
600
700
2 3 4 5 6 7891 10
10
3
10
4
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
300
350
400
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
t [s]
P
tot
[W]
I
d(AV)M
[A] T
amb
[°C]
t [ms]
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
140
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
I
FSM
[A]
T
VJ
= 125°C
T
VJ
= 25°C
t [ms]
I
2
t
[A
2
s]
R
thA
:
5.0 K/W
2.5 K/W
1.5 K/W
1.0 K/W
0.75 K/W
0.5 K/W
T
C
[°C]
I
d(AV)
[A]
0
Input Rectifier Bridge D11 - D16
Fig.2 SurgeoverloadcurrentFig.1 Typ.forwardcurrentvs.
voltagedropperdiode
Fig.3 I
2
tversustimeperdiode
Fig.4Powerdissipationvs.directoutputcurrent&amb.temperature,sin180° Fig.5 Max.forwardcurrentvs.
casetemperature
Fig.6 Transientthermalimpedancejunctiontocase
R
i
t
i
1 0.049 0.0085
2 0.012 0.0017
3 0.465 0.045
4 0.105 0.85
5 0.32 0.33
P
V
T
J
R
t h 1
R
t h 2
C
t h 2
C
t h 1
T
C
© 2009 IXYS All rights reserved
6 - 8
20090826a
MUBW 75-17 T8
IXYS reserves the right to change limits, test conditions and dimensions.
800 1000 1200 1400 1600 1800 2000
50
60
70
80
90
100
110
120
130
300
450
600
750
900
1050
1200
1350
1500
01234
0
50
100
150
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
18
012345
0
50
100
150
V
CE
[V]
I
C
[A]
V
CE
[V]
I
C
[A]
Q
G
[nC]
-di/dt [A/µs]
V
GE
[V]
I
RM
[A]
t
rr
[ns]
I
RM
t
rr
5 6 7 8 9 10 11 12 13
0
50
100
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
V
F
[V]
I
F
[A]
T
VJ
= 25°C
9 V
11 V
13 V
T
VJ
= 125°C
V
GE
= 15 V
17 V
19 V
I
C
[A]
V
GE
[V]
47 Ω
47 Ω
6.8 Ω
6.8 Ω
18 Ω
18 Ω
T
VJ
= 125°C
T
VJ
= 125°C
V
R
= 900 V
I
F
= 75 A
V
CE
= 900 V
I
C
= 75 A
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Output Inverter T1 - T6 / D1 - D6
Fig.7 Typicaloutputcharacteristic Fig.8 Typicaloutputcharacteristic
Fig.9 Typicaltransfercharacteristic Fig.10 Typicalforwardcharacteristic
offreewheelingdiode
Fig.11Typicalturnongatecharge Fig. 12 Typ.turn-offcharacteristics
offreewheelingdiode
P1-P3P4-P6P7-P8

MUBW75-17T8

Mfr. #:
Buy MUBW75-17T8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 75 Amps 1700V
Lifecycle:
New from this manufacturer.
Delivery:
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