© 2009 IXYS All rights reserved
7-8
20090826a
MUBW 75-17 T8
IXYS reserves the right to change limits, test conditions and dimensions.
0 30 60 90 120 150
0
10
20
30
40
50
60
0 10 20 30 40 50
0
10
20
30
40
0 30 60 90 120 150
0
10
20
30
40
I
C
, I
F
[A]
E
[mJ]
Q
rr
[µC]
E
[mJ]
R
G
[Ω]
I
F
[A]
E
off
E
rec
E
on
E
off
E
rec
E
on
V
CE
= 900 V
V
GE
= ±15 V
R
G
= 18 Ω
T
VJ
= 125°C
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
t [ms]
Z
thJC
[K/W]
diode
IGBT
single pulse
V
CE
= 900 V
V
GE
= ±15 V
I
C
,I
F
= 75 A
T
VJ
= 125°C
0 25 50 75 100 125 150
100
1000
10000
T [°C]
R
[Ω]
V
CE
= 900 V
V
GE
= ±15 V
R
G
= 18 Ω
T
VJ
= 125°C
Output Inverter T1 - T6 / D1 - D6
Fig.13Typ.turnonenergy&switchingtimes
versuscollectorcurrent
Fig.14 Typ.turnoffenergyandswitchingtimes
versuscollectorcurrent
Fig.15 Typicalturn-offcharacteristics
offreewheelingdiode
Fig.16 Transientthermalimpedance
junctiontocase
Fig.17Typ.transientthermalimpedance
Temperature Sensor NTC
IGBT Diode
R
i
t
i
R
i
t
i
1 0.0175 0.0015 0.0265 0.0020
2 0.0860 0.0276 0.1443 0.0318
3 0.0920 0.1311 0.1655 0.1618
4 0.0832 0.6329 0.0636 0.8218
