Philips Semiconductors Product data
74F240Octal inverting buffer
2004 Feb 25
4
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER TEST CONDITIONS
1
LIMITS UNIT
MIN TYP
2
MAX
±10%V
CC
2.4 V
p
V
CC
= MIN; V
IL
;
OH
= –
±5%V
CC
2.7 3.4 V
OH
-
v
u
u
v
=
;
IH
=
MIN
±10%V
CC
2.0 V
OH
= –
±5%V
CC
2.0 V
p
V
CC
= MIN; V
IL
;
±10%V
CC
0.50 V
OL
w-
v
u
u
v
=
;
IH
=
MIN
OL
=
±5%V
CC
0.42 0.50 V
V
IK
Input clamp voltage V
CC
= MIN; I
I
= I
IK
–0.73 –1.2 V
I
I
Input current at maximum input voltage V
CC
= MAX; V
I
= 7.0 V 100 µA
I
IH
High-level input current V
CC
= MAX; V
I
= 2.7 V 20 µA
I
IL
Low-level input current V
CC
= MAX; V
I
= 0.5 V –1.0 mA
I
OZH
Off-state output current,
high-level voltage applied
V
CC
= MAX, V
O
= 2.7 V 50 µA
I
OZL
Off-state output current,
low-level voltage applied
V
CC
= MAX, V
O
= 0.5 V –50 µA
I
OS
Short-circuit output current
3
V
CC
= MAX –100 –225 mA
I
CCH
12 18 mA
I
CC
Supply current (total)
I
CCL
V
CC
= MAX
50 70 mA
I
CCZ
35 45 mA
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5 V, T
amb
= 25 °C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged
shorting of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In
any sequence of parameter tests, I
OS
tests should be performed last.