M27C4002 Summary description
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Figure 3. LCC Connections
Figure 4. TSOP Connections
AI00729
A14
A11
A7
A3
23
Q6
Q5
Q4
Q3
Q2
NC
A2
Q12
Q8
V
SS
NC
Q11
Q10
12
A15
A9
1
Q15
V
SS
A12
Q13
A5
44
NC
A16
M27C4002
Q14
A13
A4
NC
A6
34
Q1
Q9
A10
A8
Q7
Q0
G
A0
A1
V
PP
E
A17
V
CC
DQ6
DQ3
DQ2
DQ13
DQ8
DQ7
DQ10
DQ9
A14
A8
A11
A10
A4
A15
A9
G
A7
A2
DQ1
DQ0
A0
A1
A3
A16
A17
E
DQ14
V
PP
V
CC
DQ15
AI01831
M27C4002
(Normal)
10
1
11
20 21
30
31
40
V
SS
A12 A6
A13 A5
DQ12 DQ4
DQ11 DQ5
V
SS
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Device operation M27C4002
8/24
2 Device operation
The operating modes of the M27C4002 are listed in the Operating Modes table. A single
power supply is required in the read mode. All inputs are TTL levels except for V
PP
and 12V
on A9 for Electronic Signature.
2.1 Read mode
The M27C4002 has two control functions, both of which must be logically active in order to
obtain data at the outputs. Chip Enable (E
) is the power control and should be used for
device selection. Output Enable (G
) is the output control and should be used to gate data to
the output pins, independent of device selection. Assuming that the addresses are stable,
the address access time (t
AVQV
) is equal to the delay from E to output (t
ELQV
). Data is
available at the output after a delay of t
GLQV
from the falling edge of G, assuming that E has
been low and the addresses have been stable for at least t
AVQV
-t
GLQV
.
2.2 Standby mode
The M27C4002 has a standby mode which reduces the supply current from 50mA to 100µA.
The M27C4002 is placed in the standby mode by applying a CMOS high signal to the E
input. When in the standby mode, the outputs are in a high impedance state, independent of
the G
input.
2.3 Two line output control
Because EPROMs are usually used in larger memory arrays, the product features a 2 line
control function which accommodates the use of multiple memory connection. The two line
control function allows:
The lowest possible memory power dissipation
Complete assurance that output bus contention will not occur.
For the most efficient use of these two control lines, E
should be decoded and used as the
primary device selecting function, while G
should be made a common connection to all
devices in the array and connected to the READ
line from the system control bus. This
ensures that all deselected memory devices are in their low power standby mode and that
the output pins are only active when data is required from a particular memory device.
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M27C4002 Device operation
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2.4 System considerations
The power switching characteristics of Advanced CMOS EPROMs require careful
decoupling of the devices. The supply current, I
CC
, has three segments that are of interest to
the system designer: the standby current level, the active current level, and transient current
peaks that are produced by the falling and rising edges of E
. The magnitude of the transient
current peaks is dependent on the output capacitive and inductive loading of the device. The
associated transient voltage peaks can be suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF
ceramic capacitor be used on every device between V
CC
and V
SS
. This should be a high
frequency capacitor of low inherent inductance and should be placed as close to the device
as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used between V
CC
and
V
SS
for every eight devices. The bulk capacitor should be located near the power supply
connection point.The purpose of the bulk capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
2.5 Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C4002 are in the
'1' state. Data is introduced by selectively programming '0's into the desired bit locations.
Although only '0's will be programmed, both '1's and '0's can be present in the data word.
The only way to change a '0' to a '1' is by die exposure to ultraviolet light (UV EPROM). The
M27C4002 is in the programming mode when V
PP
input is at 12.75V, G is at V
IH
and E is
pulsed to V
IL
. The data to be programmed is applied to 16 bits in parallel to the data output
pins. The levels required for the address and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V.
2.6 PRESTO II programming algorithm
PRESTO II Programming Algorithm allows the whole array to be programmed with a
guaranteed margin, in a typical time of 26.5 seconds. Programming with PRESTO II
consists of applying a sequence of 100µs program pulses to each byte until a correct verify
occurs (see Figure 5). During programming and verify operation, a MARGIN MODE circuit is
automatically activated in order to guarantee that each cell is programmed with enough
margin. No overprogram pulse is applied since the verify in MARGIN MODE provides
necessary margin to each programmed cell.
Obsolete Product(s) - Obsolete Product(s)

M27C4002-80C6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EPROM 4M (256Kx16) 80ns
Lifecycle:
New from this manufacturer.
Delivery:
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