CM100DY-34A

Feb. 2009
1
CM100DY-34A
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
¡IC ...................................................................100A
¡V
CES ......................................................... 1700V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
C1
E2
C2E1
E2 G2
LABEL
3-M5 NUTS
2-φ6.5 MOUNTING HOLES
TAB #110. t=0.5
17
48
13
94
232317
29
+1
–0.5
21.2 7.5
16 7 16 7 16
80
±0.25
4184
12 12 12
E1G1
4
12.5
(SCREWING DEPTH)
20
(14)
C2E1
E2
E2 G2G1 E1
C1
CIRCUIT DIAGRAM
Feb. 2009
2
V
CE = VCES, VGE = 0V
±V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
V
CC = 1000V, IC = 100A, VGE = 15V
V
CC = 1000V, IC = 100A
V
GE = ±15V
R
G = 4.8, Inductive load
I
E = 100A
I
E = 100A, VGE = 0V
IGBT part (1/2 module)
*1
FWDi part (1/2 module)
*1
Case to heat sink, Thermal compound applied (1/2 module)
*1,*2
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
I
C = 10mA, VCE = 10V
I
C = 100A, VGE = 15V
V
CE = 10V
V
GE = 0V
1700
±20
100
200
100
200
960
–40 ~ +150
–40 ~ +125
3500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
V
V
A
A
W
°C
°C
Vrms
N • m
g
1
2.0
2.8
24.7
2.8
0.53
200
150
550
350
300
3.0
0.13
0.21
48
mA
µA
nF
nC
ns
µC
V
K/W
2.2
2.45
670
10
0.022
4.8
7.0 V
V
5.5 8.5
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
R
th(j-c)R
R
th(c-f)
RG
Symbol
Parameter
V
GE(th)
VCE(sat)
*
1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Note 1. I
E, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j) does not exceed Tjmax rating.
3. Junction temperature (T
j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, T
C = 108°C
*1
(Note 2)
Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)
T
C = 25°C
*1
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
V
CES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Thermal resistance
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
200
40
80
120
160
0
046810
T
j
= 25°C
11
12
10
9
V
GE
=
20V
2
15
13
8
048121620
V
CE
= 10V
0
40
80
120
160
200
T
j
= 25°C
T
j
= 125°C
5
0
1
2
3
4
0 50 100 150 200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0
0
4 8 12 16 20
T
j
= 25°C
I
C
= 200A
I
C
= 100A
I
C
= 40A
10
1
0.5 1 1.5 2 2.5 3 3.5 4
2
5
3
7
2
5
3
7
10
2
10
3
T
j
= 25°C
T
j
= 125°C
10
–1
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2 10
0
357 2 10
1
357 2 10
2
357
VGE = 0V
Cies
Coes
Cres
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(
V
)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)

CM100DY-34A

Mfr. #:
Manufacturer:
Description:
IGBT MOD DUAL 1700V 100A A SER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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