Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
CM100DY-34A
P1-P3
P4-P5
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM100DY
-34A
HIGH POWER SWITCHING USE
Conditions:
V
CC
= 1000V
V
GE
=
±
15V
R
G
= 4.7
Ω
T
j
= 125
°
C
Inductive load
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
57
10
3
23
5
7
23
t
d(off)
t
d(on)
t
f
t
r
Conditions:
V
CC
= 1000V
V
GE
=
±
15V
I
C
= 100A
T
j
= 125
°
C
Inductive load
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
10
1
57
10
2
23
5
7
23
t
d(off)
t
d(on)
t
f
t
r
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
57
10
3
23
5
7
23
Conditions:
V
CC
= 1000V
V
GE
=
±
15V
R
G
= 4.7
Ω
T
j
= 125
°
C
Inductive load
E
rr
E
on
E
off
10
3
10
2
10
1
E
off
E
rr
E
on
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23
5
7
23
10
1
10
2
23
5
7
10
3
23
5
7
10
1
10
2
2
3
5
7
2
3
5
7
10
3
t
rr
I
rr
Conditions:
V
CC
= 1000V
V
GE
=
±
15V
R
G
= 4.7
Ω
T
j
= 25
°
C
Inductive load
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–5
23
5
7
10
–4
23
5
7
10
–3
23
5
7
10
–2
23
5
7
10
–1
23
5
7
10
0
23
5
7
10
1
IGBT part:
Per unit base = R
th(
j–c)
= 0.13
K
/W
FWDi part:
Per unit base = R
th(
j–c)
= 0.21
K
/
W
Conditions:
V
CC
= 1000V
V
GE
=
±
15V
I
C
= 100A
T
j
= 125
°
C
Inductive load
Single Pulse
Tc= 25
°
C
Tc measured point is
just under the chips
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
(TYPICAL)
SWITCHING TIME t
d(on)
, t
r
, t
d(off)
, t
f
(ns)
COLLECTOR CURRENT I
C
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
(TYPICAL)
SWITCHING TIME t
d(on)
, t
r
, t
d(off)
, t
f
(ns)
GATE RESISTANCE R
G
(
Ω
)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS E
on
, E
off
, E
rr
(mJ/pulse)
COLLECTOR CURRENT I
C
(A)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS E
on
, E
off
, E
rr
(mJ/pulse)
GATE RESISTANCE R
G
(
Ω
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
C
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j–c)
(ratio)
TIME (s)
Feb. 2009
5
MITSUBISHI IGBT MODULES
CM100DY
-34A
HIGH POWER SWITCHING USE
0
4
8
16
12
20
0
200
400
600
800
1000
V
CC
= 1000V
V
CC
= 800V
I
C
= 100A
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
P1-P3
P4-P5
CM100DY-34A
Mfr. #:
Buy CM100DY-34A
Manufacturer:
Description:
IGBT MOD DUAL 1700V 100A A SER
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
CM100DY-34A