BGU7032 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 September 2010 3 of 11
NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
5. Limiting values
[1] V
ctrl(Gp)
must not exceed V
CC
; I
CTRL
must be limited to 5 mA (maximum).
[2] T
sp
is the temperature at the solder point of the ground lead.
Remark: V
ctrl(Gp)
must not exceed V
CC
; I
CTRL
must be limited to a maximum of 5 mA.
6. Thermal characteristics
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled −0.6 5.25 V
V
ctrl(Gp)
power gain control
voltage
pin CTRL
[1]
0V
CC
V
I
CC(tot)
total supply current - 60 mA
P
tot
total power dissipation T
sp
≤ 100 °C
[2]
- 250 mW
P
i
input power single tone - 10 dBm
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −10 +70 °C
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
2- kV
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 240 K/W
Table 7. Characteristics
T
amb
= 25
°
C; typical values at V
CC
= 5 V; Z
S
=Z
L
=75
Ω
; R
bias
= 43
Ω
; 40 MHz
≤
f
1
≤
1000 MHz.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 4.75 5.0 5.25 V
I
CC(tot)
total supply current G
p
= 10 dB mode
[1]
-43-mA
bypass mode
[1]
-4-mA
|s
21
|
2
insertion power gain G
p
= 10 dB mode
[1]
-10-dB
bypass mode
[1]
- −2- dB
SL
sl
slope straight line - −1- dB
FL flatness of frequency response - −0.2 - dB
NF noise figure G
p
= 10 dB mode
[1]
-4.5-dB
bypass mode
[1]
-2.5-dB
RL
in
input return loss G
p
= 10 dB mode
[1]
-18-dB
bypass mode
[1]
-8-dB
