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BGU7032,115

P1-P3P4-P6P7-P9P10-P11
BGU7032 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 September 2010 4 of 11
NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
[1] Mode depends on setting of V
ctrl(Gp)
(V
CTRL
); see Table 8.
[2] The fundamental frequency (f
1
) is 1000 MHz. The intermodulation product (IM3) is 2 × f
2
− f
1
, where
f
2
=f
1
± 1 MHz. Input power P
i
= −10 dBm.
Remark: V
ctrl(Gp)
must not exceed V
CC
; I
CTRL
must be limited to a maximum of 5 mA.
RL
out
output return loss G
p
= 10 dB mode
[1]
-12-dB
bypass mode
[1]
-8-dB
P
L(1dB)
output power at 1 dB gain
compression
1GHz; G
p
= 10 dB
mode
[1]
-14-dBm
IP3
O
output third-order intercept point G
p
= 10 dB mode
[1][2]
-29-dBm
bypass mode
[1][2]
-29-dBm
Table 8. Gain selection (pin CTRL)
−
10
°
C
≤
T
amb
≤
+70
°
C; recommended power-up condition: V
CTRL
= logic 0 or < 0.7 V.
V
ctrl(Gp)
(V
CTRL
) (V) Mode
≤ 0.7 bypass
≥ 4.3 G
p
= 10 dB
Table 7. Characteristics …continued
T
amb
= 25
°
C; typical values at V
CC
= 5 V; Z
S
=Z
L
=75
Ω
; R
bias
= 43
Ω
; 40 MHz
≤
f
1
≤
1000 MHz.
Symbol Parameter Conditions Min Typ Max Unit
BGU7032 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 September 2010 5 of 11
NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
8. Application information
Other applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layout
Components are listed in Table 9.
Fig 1. BGU7032 application circuit
001aam38
3
C4
C5
R2
3
n.c.
CTRL
2
5
4
16
RF_OUTRF_IN
V
CC
L1
R1 = R
bias
C1X1
C2
C3
X2
PCB material = FR4.
PCB thickness = 1.6 mm.
PCB size = 30 mm × 30 mm.
ε
r
= 4.5; thickness of copper layer = 35 μm.
Components are listed in Table 9
.
Fig 2. BGU7032 application circuit board layout
001aam38
6
X1 X2
C5
R2
C3
C1
C2
L1
R1
C4
RF_OUTRF_IN
GND
CTRL
GND
VCC
GND
BGU7032 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 14 September 2010 6 of 11
NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
[1] L1 and R1 must have a power rating of 0.1 W or higher.
Table 9. List of components
See Figure 1 and Figure 2.
Component Description Value Remarks Function
C1, C2 capacitor 10 nF DC blocking
C3, C4 capacitor 10 nF decoupling
C5 capacitor 10 μF decoupling
L1 chip ferrite bead 1.5 kΩ
[1]
Murata BLM18HE152SN1DF RF choke
R1 resistor 43 Ω
[1]
R
bias
bias setting
R2 resistor 1.8 kΩ current limiting
X1, X2 connector 75 Ω F-connector, edge mount PCB
reflow type, Bomar 861V509ERG
input/output
P1-P3P4-P6P7-P9P10-P11

BGU7032,115

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 1CH 4.5dB 5V 43mA
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