6. The refresh rate is required to double when 85°C < T
C
95°C.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM
Electrical Specifications
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x
8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
459 450 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
576 558 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
252 252 mA
Precharge quiet standby current I
DD2Q
2
360 360 mA
Precharge standby current I
DD2N
2
378 378 mA
Precharge stanby ODT current I
DD2NT
1
387 369 mA
Active power-down current I
DD3P
2
378 378 mA
Active standby current I
DD3N
2
576 540 mA
Burst read operating current I
DD4R
1
954 846 mA
Burst write operating current I
DD4W
1
981 873 mA
Refresh current I
DD5B
1
1728 1719 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
270 270 mA
All banks interleaved read current I
DD7
1
1512 1458 mA
Reset current I
DD8
2
252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM
I
DD
Specifications
PDF: 09005aef847d79ed
kdf18c512_1Gx72pdz - Rev. H 11/15 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT18KDF1G72PDZ-1G6P1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR3 8GB RDIMM VLP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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