SA60
2 SA60U
TheSA60isconstructedfromMOSFETtransistors.ESDhandlingproceduresmustbeobserved.
Theexposedsubstratecontainsberyllia(BeO).Donotcrush,machine,orsubjecttotemperatures
inexcessof850°Ctoavoidgeneratingtoxicfumes.
Parameter Test Conditions
1
Min Typ Max Units
INPUT
ANALOGINPUTVOLTAGES V
CC
=12V
A,BOUT=50%DutyCycle 1/2V
CC
VDC
AOUT=100%DutyCycleHigh 1/3V
CC
VDC
BOUT=100%DutyCycleHigh 2/3V
CC
VDC
PWMINPUT
PWMPULSELOWVOLTAGE 0 0.8 VDC
PWMPULSEHIGHVOLTAGE 2.7 5.0 VDC
PWMFREQUENCY 45 250 KHz
DISABLEON 2.7 V
CC
VDC
DISABLEOFF 0 0.8 VDC
OUTPUT
V
DS
(ON)VOLTAGE,eachMOSFET I
DS
=10A 1.7 2.5 VDC
TOTALR
ON
,bothMOSFETs 0.45 Ω
EFFICIENCY,10AOUTPUT +V
S
=80A 91 %
CURRENT,continuous 10 A
CURRENT,peak t=100msec 15 A
SWITCHINGFREQUENCY C
F
=270pF 45 KHz
DEADTIME 90 nS
POWER SUPPLY
+V
S
VOLTAGE(Note4) +V
S
Current=LoadCurrent 80 VDC
V
CC
VOLTAGE 9.5 12 15 VDC
V
CC
CURRENT V
CC
=12VDC 28 36 mA
+V
S
CURRENT SwitchingFreq.=45kHz,no
load,V
S
=50V
45 mA
Parameter Symbol Min Max Units
SUPPLYVOLTAGE,+V
S
(Note4) 80 V
OUTPUTCURRENT,peak 15 A
LOGICSUPPLYVOLTAGE,V
CC
16 V
POWERDISSIPATION,internal(Note3) 156 W
TEMPERATURE,pinsolder,10smax. 260 °C
TEMPERATURE,junction(Note2) 150 °C
TEMPERATURERANGE,storage −55 125 °C
OPERATINGTEMPERATURERANGE,case −40 85 °C
1. CHARACTERISTICS AND SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
CAUTION