Philips Semiconductors
BUK75/76150-55A
TrenchMOS™ standard level FET
Product data Rev. 02 — 25 November 2003 2 of 15
9397 750 12342
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
BUK75150-55A TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BUK76150-55A D
2
-PAK Plastic single-ended surface mounted package (Philips version of D
2
-PAK);
3 leads (one lead cropped)
SOT404
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) - 55 V
V
DGR
drain-gate voltage (DC) R
GS
=20kΩ -55V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;
Figure 2 and 3
-11A
T
mb
= 100 °C; V
GS
=10V;Figure 2 - 7.8 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
-44A
P
tot
total power dissipation T
mb
=25°C; Figure 1 -36W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
DR
reverse drain current (DC) T
mb
=25°C - 11 A
I
DRM
peak reverse drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 44 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source avalanche
energy
unclamped inductive load; I
D
=11A;
V
DS
≤ 55 V; V
GS
= 10 V; R
GS
=50Ω;
starting T
mb
=25°C
-16mJ
