Philips Semiconductors
BUK75/76150-55A
TrenchMOS™ standard level FET
Product data Rev. 02 — 25 November 2003 7 of 15
9397 750 12342
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
=25°C; t
p
= 300 µsT
j
=25°C; I
D
=5A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03np21
0
10
20
30
0246810
V
DS
(V)
I
D
(A)
Label is V
GS
(V)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
20
16
14
12
03np20
80
120
160
200
5101520
V
GS
(V)
R
DSon
(mΩ)
03np22
100
150
200
250
300
350
0 5 10 15 20
I
D
(A)
R
DSon
(mΩ)
5.5 6
6.5
7 8 10
Label is V
GS
(V)
03ne89
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
