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74ABT16543BB,518

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
9397 750 15046 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 26 May 2005 7 of 17
Philips Semiconductors
74ABT16543
16-bit latched transceiver with dual enable; 3-state
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal
environment can create junction temperatures which are detrimental to reliability.
9. Recommended operating conditions
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
V
I
input voltage
[1]
−1.2 +7.0 V
V
O
output voltage output in OFF-state or
HIGH-state
[1]
−0.5 +5.5 V
I
IK
input diode current V
I
< 0 V - −18 mA
I
OK
output diode current V
O
< 0 V - −50 mA
I
O
output current output in LOW-state - 128 mA
output in HIGH-state - −64 mA
T
j
junction temperature
[2]
- +150 °C
T
stg
storage temperature −65 +150 °C
Table 6: Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 - 5.5 V
V
I
input voltage 0 - V
CC
V
V
IH
HIGH-level input voltage 2.0 - - V
V
IL
LOW-level input voltage - - 0.8 V
I
OH
HIGH-level output current - - −32 mA
I
OL
LOW-level output current - - 64 mA
∆t/∆V input transition rise or fall rate 0 - 10 ns/V
T
amb
ambient temperature in free air −40 - +85 °C
9397 750 15046 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 26 May 2005 8 of 17
Philips Semiconductors
74ABT16543
16-bit latched transceiver with dual enable; 3-state
10. Static characteristics
Table 7: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 °C
V
IK
input clamp voltage V
CC
= 4.5 V; I
IK
= −18 mA - - −1.2 V
V
OH
HIGH-level output voltage V
CC
= 4.5 V; V
I
=V
IL
or V
IH
I
OH
= −3 mA 2.5 2.9 - V
I
OH
= −32 mA 2.0 2.4 - V
V
CC
= 5.0 V; V
I
=V
IL
or V
IH
I
OH
= −3 mA 3.0 3.4 - V
V
OL
LOW-level output voltage V
CC
= 4.5 V; V
I
=V
IL
or V
IH
; I
OL
= 64 mA - 0.36 0.55 V
V
RST
power-up output voltage V
CC
= 5.5 V; I
O
= 1 mA; V
I
= GND or V
CC
[1]
- 0.13 0.55 V
I
LI
input leakage current of
control pins
V
CC
= 5.5 V; V
I
= GND or 5.5 V - ±0.01 ±1.0 µA
I
OFF
power-off leakage current V
CC
= 0.0 V; V
O
or V
I
≤ 4.5 V - ±2.0 ±100 µA
I
PU
, I
PD
power-up or power-down
down 3-state output current
V
CC
= 2.1 V; V
O
=0.0VorV
CC
;V
I
= GND or
V
CC
; V
nOEAB
and V
nOEBA
= don’t care
[2]
- ±1.0 ±50 µA
I
OZ
3-state output current V
CC
= 5.5 V; V
I
=V
IL
or V
IH
outputs HIGH-state at V
O
= 5.5 V - 1.0 10 µA
outputs LOW-state at V
O
= 0.0 V - −1.0 −10 µA
I
CEX
output HIGH leakage current V
CC
= 5.5 V; V
O
= 5.5 V; V
I
= GND or V
CC
- 1.0 50 µA
I
O
output current V
CC
= 5.5 V; V
O
= 2.5 V
[3]
−50 −100 −200 mA
C
I
input capacitance V
I
= 0 V or V
CC
-3-pF
C
I/O
I/O capacitance V
O
= 0 V or V
CC
; 3-state - 7 - pF
I
CC
quiescent supply current V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state - 0.55 2 mA
outputs LOW-state - 9 19 mA
outputs 3-state - 0.55 2 mA
∆I
CC
additional supply current per
input pin
V
CC
= 5.5 V; one input at 3.4 V; other inputs
at V
CC
or GND
[4]
- 5.0 50 µA
T
amb
= −40 °C to +85 °C
V
IK
input clamp voltage V
CC
= 4.5 V; I
IK
= −18 mA - - −1.2 V
V
OH
HIGH-level output voltage V
CC
= 4.5 V; V
I
=V
IL
or V
IH
I
OH
= −3 mA 2.5 - - V
I
OH
= −32 mA 2.0 - - V
V
CC
= 5.0 V; V
I
=V
IL
or V
IH
I
OH
= −3 mA 3.0 - - V
V
OL
LOW-level output voltage V
CC
= 4.5 V; V
I
=V
IL
or V
IH
; I
OL
= 64 mA 0.55 V
V
RST
power-up output voltage V
CC
= 5.5 V; I
O
= 1 mA; V
I
= GND or V
CC
[1]
- - 0.55 V
I
LI
input leakage current of
control pins
V
CC
= 5.5 V; V
I
= GND or 5.5 V - - ±1.0 µA
I
OFF
power-off leakage current V
CC
= 0.0 V; V
O
or V
I
≤ 4.5 V - - ±100 µA
9397 750 15046 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 26 May 2005 9 of 17
Philips Semiconductors
74ABT16543
16-bit latched transceiver with dual enable; 3-state
[1] For valid test results, data must not be loaded into the latches after applying the power.
[2] This parameter is valid for any V
CC
between 0 V and 2.1 V, with a transition time of up to 10 ms; From V
CC
= 2.1 V to V
CC
=5V± 10 %
a transition time of up to 100 µs is permitted.
[3] Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4] This is the increase in supply current for each input at 3.4 V.
11. Dynamic characteristics
I
PU
, I
PD
power-up or power-down
down 3-state output current
V
CC
= 2.1 V; V
O
=0.0VorV
CC
;V
I
= GND or
V
CC
; V
nOEAB
and V
nOEBA
= don’t care
[2]
--±50 µA
I
OZ
3-state output current V
CC
= 5.5 V; V
I
=V
IL
or V
IH
outputs HIGH-state at V
O
= 5.5 V - - 10 µA
outputs LOW-state at V
O
= 0.0 V - - −10 µA
I
CEX
output HIGH leakage current V
CC
= 5.5 V; V
O
= 5.5 V; V
I
= GND or V
CC
--50µA
I
O
output current V
CC
= 5.5 V; V
O
= 2.5 V
[3]
−50 - −200 mA
I
CC
quiescent supply current V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state - - 2 mA
outputs LOW-state - - 19 mA
outputs 3-state - - 2 mA
∆I
CC
additional supply current per
input pin
V
CC
= 5.5 V; one input at 3.4 V; other inputs
at V
CC
or GND
[4]
--50µA
Table 7: Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Typ Max Unit
Table 8: Dynamic characteristics
GND = 0 V; for test circuit see Figure 10.
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 °C; V
CC
= 5.0 V
t
PLH
propagation delay
nAx to nBx, nBx to nAx see
Figure 6 1.0 2.5 3.3 ns
n
LEBA to nAx, nLEAB to nBx see Figure 5 1.0 3.1 4.3 ns
t
PHL
propagation delay
nAx to nBx, nBx to nAx see
Figure 6 1.0 2.2 4.4 ns
n
LEBA to nAx, nLEAB to nBx see Figure 5 1.2 3.0 4.8 ns
t
PZH
output enable time see Figure 7
n
OEBA to nAx, nOEAB to nBx 1.0 3.3 4.3 ns
n
EBA to nAx, nEAB to nBx 1.0 3.4 4.9 ns
t
PZL
output enable time see Figure 8
n
OEBA to nAx, nOEAB to nBx 1.1 3.3 5.9 ns
n
EBA to nAx, nEAB to nBx 1.2 3.4 6.5 ns
t
PHZ
output disable time see Figure 7
n
OEBA to nAx, nOEAB to nBx 1.9 3.5 5.0 ns
n
EBA to nAx, nEAB to nBx 2.0 3.4 5.6 ns
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

74ABT16543BB,518

Mfr. #:
Buy 74ABT16543BB,518
Manufacturer:
NXP Semiconductors
Description:
IC TXRX NON-INVERT 5.5V 52QFP
Lifecycle:
New from this manufacturer.
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