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PBSS9110D,115

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 03 — 22 November 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - −100 V
I
C
collector current - - −1A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--−3A
R
CEsat
collector-emitter
saturation resistance
I
C
= −1A;
I
B
= −100 mA
[1]
- 170 320 mΩ
PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 2 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 collector
3base
4emitter
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS9110D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS9110D A7
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −120 V
V
CEO
collector-emitter voltage open base - −100 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −1A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −3A
I
B
base current - −0.3 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-300mW
[2]
-550mW
[3]
-700mW
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS9110D,115

Mfr. #:
Buy PBSS9110D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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