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PBSS9110D,115

P1-P3P4-P6P7-P9P10-P12P13-P14
PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 6 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
V
CE
= −10 V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −10 V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
001aaa376
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
V
CE
(V)
0 −5−4−2 −3−1
001aaa384
−0.8
−1.2
−0.4
−1.6
−2
I
C
(A)
0
I
B
(mA) = −45
−40.5
−36
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
001aaa377
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
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I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−1
−10
V
BEsat
(V)
−10
−1
(1)
(2)
(3)
PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 7 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=10
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=50
(2) I
C
/I
B
=20
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
T
amb
=25°C
(1) I
C
/I
B
=50
(2) I
C
/I
B
=20
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
001aaa378
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
001aaa380
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
001aaa382
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
001aaa383
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 8 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
8. Test information
Fig 12. BISS transistor switching time definition
V
CC
= −10 V; I
C
= −0.5 A; I
Bon
= −0.025 A; I
Boff
= 0.025 A
Fig 13. Test circuit for switching times
006aaa266
−
I
Bon
(100 %)
−
I
B
input pulse
(idealized waveform)
−
I
Boff
90 %
10 %
−
I
C
(100 %)
−
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
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PBSS9110D,115

Mfr. #:
Buy PBSS9110D,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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