IXTQ110N055P Datasheet IXTA110N055P, IXTP110N055P, IXTQ110N055P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 175° C55V

V

DGR

T

J

= 25° C to 175° C; R

GS

= 1 MΩ 55 V

V

GS

Continuous ±20 V

V

GSM

Tranisent ±30 V

I

D25

T

C

= 25° C 110 A

I

DRMS

External lead current limit 75 A

I

DM

T

C

= 25° C, pulse width limited by T

JM

250 A

I

AR

T

C

= 25° C 110 A

E

AR

T

C

= 25° C30mJ

E

AS

T

C

= 25° C 1.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 10 Ω

P

D

T

C

= 25° C 390 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g

TO-220 4 g

TO-263 3 g

G = Gate D = Drain

S = Source TAB = Drain

DS99182E(10/05)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA55V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 3.0 5.5 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

11 13.5 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHT

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-3P (IXTQ)

TO-263 (IXTA)

TO-220 (IXTP)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

IXTA 110N055P

IXTP 110N055P

IXTQ 110N055P

V

DSS

= 55 V

I

D25

= 110 A

R

DS(on)

≤≤

≤ 13.5 m

ΩΩ

Ω

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 110N055P IXTP 110N055P

IXTQ 110N055P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 23 36 S

C

iss

2210 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1400 pF

C

rss

550 pF

t

d(on)

27 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

53 ns

t

d(off)

R

G

= 10 Ω (External) 66 ns

t

f

45 ns

Q

g(on)

76 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

17 nC

Q

gd

33 nC

R

thJC

0.38 ° C/W

R

thCS

(TO-3P) 0.21 °C/W

(TO-220) 0.25 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 110 A

I

SM

Repetitive 250 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25 A, -di/dt = 100 A/µs80ns

Q

RM

V

R

= 25 V, V

GS

= 0 V 1.4 µC

TO-3P (IXTQ) Outline

Pins: 1 - Gate 2 - Drain

TO-220 (IXTP) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

TO-263 (IXTA) Outline

IXTA 110N055P IXTP 110N055P

IXTQ 110N055P

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

20

40

60

80

100

120

140

160

180

200

220

012345678910

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

8V

9V

5V

Fig. 3. Output Characte ristics

@ 150

º

C

0

10

20

30

40

50

60

70

80

90

100

110

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5V

6V

7V

8V

Fig. 1. Output Characte ristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

90

100

110

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

5V

6V

8V

Fig. 4. R

DS(on

)

Norm alized to 0.5 I

D25

Value vs . Junction Tem perature

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 110A

I

D

= 55A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Tem perature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 5. R

DS(on)

Norm alized to 0.5 I

D25

Value vs . Drain Current

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0 25 50 75 100 125 150 175 200 225 250

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 25

º

C

V

GS

= 10V

V

GS

= 15V - - - - -

T

J

= 175

º

C

IXTQ110N055P

IXTQ110N055P

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