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IXTQ110N055P
P1-P3
P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXT
A
1
10N055P IXTP
1
10N055P
IXTQ 1
10N055P
F
ig
. 11. Cap
acit
an
ce
100
1000
10000
0
5
10
15
20
25
30
35
4
0
V
DS
- V
ol
t
s
Capac
itanc
e -
pic
oF
ar
ads
C
is
s
C
os
s
C
rs
s
f =
1
M
H
z
F
ig
. 10. Gat
e
C
h
ar
g
e
0
1
2
3
4
5
6
7
8
9
10
0
1
0
2
03
04
05
0
6
07
08
0
Q
G
-
nanoC
oulom
bs
V
G S
- V
o
l
ts
V
DS
= 2
2.
5V
I
D
= 5
5A
I
G
= 1
0m
A
F
i
g.
7
.
I
nput Adm
i
tta
nc
e
0
25
50
75
100
125
150
175
200
225
250
23
456
78
9
1
0
1
1
V
G S
- V
ol
t
s
I
D
- A
m
p
e
res
T
J
= -4
0
º
C
25
º
C
1
50
º
C
F
i
g.
8
.
Tr
a
ns
c
onduc
ta
nce
0
5
10
15
20
25
30
35
40
45
50
0
50
100
150
200
250
300
I
D
-
A
m
per
es
g
f s
- S
i
e
m
en
s
T
J
= -4
0
º
C
2
5
º
C
1
50
º
C
F
ig
. 9. So
u
r
ce
C
u
r
r
e
n
t
vs
.
S
ource
-To-D
rai
n V
olt
age
0
50
100
150
200
250
300
0
.4
0.6
0.8
1
1.2
1
.4
1.6
1.8
2
V
S D
- V
ol
t
s
I
S
- A
m
p
e
res
T
J
= 15
0
º
C
T
J
= 2
5
º
C
Fi
g
.
1
2
.
Fo
r
w
a
r
d
-
Bi
a
s
S
a
f
e O
per
a
t
i
n
g
A
r
ea
1
10
100
1000
11
0
1
0
0
V
D S
- V
ol
t
s
I
D
-
Amper
es
100µs
1m
s
DC
T
J
= 17
5
º
C
T
C
= 25
º
C
R
DS(
on)
Lim
it
10m
s
25µs
© 2006 IXYS All rights reserved
IXT
A
1
10N055P IXTP
1
10N055P
IXTQ 1
10N055P
F
ig
. 13. M
axim
u
m
T
r
an
s
i
e
n
t
T
h
e
r
m
al R
e
s
is
tan
ce
0.
01
0.
10
1.
00
0.
1
1
10
100
1000
P
ul
s
e Wi
dth -
m
i
l
l
i
s
ec
onds
R
( t
h
) J C
-
ºC / W
P1-P3
P4-P5
IXTQ110N055P
Mfr. #:
Buy IXTQ110N055P
Manufacturer:
Description:
MOSFET N-CH 55V 110A TO-3P
Lifecycle:
New from this manufacturer.
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