IXTQ110N055P

IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 10 20304050 607080
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 22.5V
I
D
= 55A
I
G
= 10m A
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
23456 7891011
V
G S
- Volts
I
D
- Amperes
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
110100
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 13. Maxim um Transie nt Therm al Res istance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W

IXTQ110N055P

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 55V 110A TO-3P
Lifecycle:
New from this manufacturer.
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