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BAS70JFILM

P1-P3P4-P6P7-P9P10-P12P13-P14
October 2009 Doc ID 12563 Rev 2 1/14
14
BAS70
Low capacitance, low series inductance and resistance Schottky diodes
Features
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ Surface mount device
■ Low capacitance diode
■ Low resistance and inductance
Description
The BAS70 series uses 70 V Schottky barrier
diodes packaged in SOD-123, SOD-323, SOD-
523, SOT-23, SOT-323, SOT-323-6L or SOT-666.
These diodes are specially suited for signal
detection and temperature compensation in RF
applications.
Table 1. Device summary
Symbol Value
I
F
70 mA
V
RRM
70 V
C
(max) 2 pF
T
j
(max) 150 °C
SOD-323
SOD-523
SOT-23
SOT-666
BAS70JFILM
(Single)
BAS70KFILM
(Single)
BAS70FILM
(Single)
BAS70-04FILM
(Series)
BAS70-05FILM
(Common cathode)
BAS70WFILM
(Single)
BAS70-05WFILM
(Common cathode)
BAS70-06WFILM
(Common anode)
BAS70-04WFILM
(Series)
BAS70-07P6FILM
(2 parallel diodes)
BAS70-08SFILM
(3 parallel diodes)
BAS70-09P6FILM
(2 opposite diodes)
BAS70-06FILM
(Common anode)
SOT-323
SOT-323-6L
Configurations in top view
SOD-123
BAS70ZFILM
(Single)
www.st.com
Characteristics BAS70
2/14 Doc ID 12563 Rev 2
1 Characteristics
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 70 V
I
F
Continuous forward current 70 mA
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 1 A
T
stg
Storage temperature range - 65 to +150 °C
T
j
Maximum operating junction temperature 150 °C
T
L
Maximum soldering temperature 260 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
(1)
1. Epoxy printed circuit board with recommended pad layout
SOD-123, SOT-23 500
°C/WSOT-323, SOD-323 550
SOD-523, SOT-666 600
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current T
j
= 25 °C
V
R
= 50 V 100 nA
V
R
= 70 V 10
µA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop T
j
= 25 °C
I
F
= 1 mA 410
mVI
F
= 10 mA 750
I
F
= 15 mA 1000
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
C Diode capacitance V
R
= 0 V, F = 1 MHz 2 pF
R
F
Differential forward
resistance
I
F
= 10 mA, F = 100 MHz 30 Ω
L
S
Series inductance 1.5 nH
BAS70 Characteristics
Doc ID 12563 Rev 2 3/14
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 1)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
d=0.05
d=0.1
d=0.2
d=0.5
d=1
T
d
=tp/T
tp
P(W)
I
F(AV)
(A)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 25 50 75 100 125 150
I
F(AV)
(A)
T
d
=tp/T
tp
T
amb
(°C)
Figure 3. Reverse leakage current versus
reverse applied voltage
(typical values)
Figure 4. Reverse leakage current versus
junction temperature
(typical values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 10203040506070
I
R
(µA)
Tj=150 °C
Tj=85 °C
Tj=25 °C
V
R
(V)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 25 50 75 100 125 150
I
R
(µA)
V
R
=50 V
T
j
(°C)
Figure 5. Junction capacitance versus
reverse applied voltage
(typical values)
Figure 6. Forward voltage drop versus
forward current (typical values)
0.1
1.0
10.0
0.1 1.0 10.0 100.0
C(pF)
F=1 MHz
V
OSC
=30 mV
RMS
Tj=25 °C
V
R
(V)
1.E-01
1.E+00
1.E+01
1.E+02
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
FM
(mA)
Tj=85°CTj=85°C
Tj=-40 °CTj=-40 °C
Tj=150 °C
V
FM
(V)
P1-P3P4-P6P7-P9P10-P12P13-P14

BAS70JFILM

Mfr. #:
Buy BAS70JFILM
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 70mA 70 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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