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PTFA212401F V4 R250

P1-P3P4-P6P7-P9P10-P11
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Data Sheet 1 of 11 Rev. 04, 2009-10-05
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
PTFA212401F
Package H-37260-2
Features
• Thermally-enhanced packages, Pb-free and
RoHS compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
• Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
• Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
*See Infineon distributor for future availability.
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
-60
-55
-50
-45
-40
-35
-30
36 38 40 42 44 46 48
Average Output Power (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Up
ACPR Low
Data Sheet 2 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
RF Characteristics
Two-Carrier WCDMA Measurements (tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 50 W average
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
14.8 15.8 — dB
Drain Efficiency η
D
26 28 — %
Intermodulation Distortion IMD — –35.0 –33 dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 220 W PEP, ƒ
1
= 2140 MHz, ƒ
2
= 2141 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
— 15.8 — dB
Drain Efficiency η
D
— 38.5 — %
Intermodulation Distortion IMD — –28 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 30 V, V
GS
= 0 V I
DSS
— — 1.0 µA
V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.03 — Ω
Operating Gate Voltage V
DS
= 30 V, I
DQ
= 1.6 A V
GS
2.0 2.5 3.0 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–0.5 to +12 V
Junction Temperature T
J
200 °C
Total Device Dissipation P
D
761 W
Above 25°C derate by 4.35 W/°C
Storage Temperature Range T
STG
–40 to +150 °C
Thermal Resistance (T
CASE
= 70°C, 50 W Average WCDMA) R
θJC
0.23 °C/W
Data Sheet 3 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Two-carrier WCDMA at Selected Biases
V
DD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
series show I
DQ
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Output Power, PEP (dBm)
3rd Order IMD (dBc)
1.6 A
2.0 A
1.8 A
2.2 A
1.4 A
*See Infineon distributor for future availability.
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFA212401E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray
PTFA212401F V4 H-37260-2 Thermally-enhanced earless flange, single-ended Tray
Broadband Performance
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50 W
10
15
20
25
30
35
40
2050 2080 2110 2140 2170 2200
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production test fixture)
P1-P3P4-P6P7-P9P10-P11

PTFA212401F V4 R250

Mfr. #:
Buy PTFA212401F V4 R250
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
Lifecycle:
New from this manufacturer.
Delivery:
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