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PTFA212401F V4 R250

P1-P3P4-P6P7-P9P10-P11
Data Sheet 4 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz
12
13
14
15
16
17
0 40 80 120 160 200 240
Output Power (W)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Gain
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 1600 mA , ƒ = 2140 MHz,
P
OUT
= 53 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
3rd Order
7th
5th
Intermodulation Distortion (dBc)
vs. Output Power
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ
1
= 2137.5 MHz, ƒ
2
= 2142.5 MHz
-60
-50
-40
-30
-20
10 100 1000
Output Power, PEP (W)
IM5
IM7
Intermodulation Distortion (dBc)
Up
Low
IM3
Voltage Sweep
I
DQ
= 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-50
-40
-30
-20
-10
24 26 28 30 32
Supply Voltage (V)
10
20
30
40
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
3rd Order IMD (dBc)
Data Sheet 5 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Gain vs. Power Sweep (CW) over
Temperature
V
DD
= 30 V, I
DQ
= 1500 mA, ƒ = 2140 MHz
12
13
14
15
16
17
18
1 10 100 1000
Output Power (W)
Power Gain (dB)
-15C
25C
85C
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Output Power, avg. (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
IM3 (dBc), ACPR (dBc)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
44 46 48 50 52 54
Output Power, PEP (dBm)
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Output Peak-to-Average Ratio Compression
(PARC) at various Power Levels
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
0.001
0.01
0.1
1
10
100
1 2 3 4 5 6 7 8
Peak-to-Average (dB)
Probability (%)
52 dBm
51 dBm
50 dBm
48 dBm
46 dBm
Input
Data Sheet 6 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
0.1
0.2
0
.
1
0
.
2
0
.
1
0
.
2
A
R
D
G
E
N
E
R
A
T
O
R
-
-
-
>
<
-
-
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
2080 MHz
2200 MHz
Z Load
Z Source
2200 MHz
2080 MHz
Z Source Z Load
G
S
D
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
2080 10.050 –4.250 1.140 2.07
2110 9.750 –4.320 1.080 2.38
2140 9.500 –4.380 1.090 2.65
2170 9.280 –4.350 1.130 2.89
2200 9.000 –4.460 1.450 3.11
Broadband Circuit Impedance
Z
0
= 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Typical Performance (cont.)
P1-P3P4-P6P7-P9P10-P11

PTFA212401F V4 R250

Mfr. #:
Buy PTFA212401F V4 R250
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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