OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSZ900N15NS3GATMA1

P1-P3P4-P6P7-P9
s
BSZ900N15NS3 G
OptiMOS
TM
3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
13 A
T
C
=100 °C
8
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
52
Avalanche energy, single pulse
E
AS
I
D
=10 A, R
GS
=25 Ω
30 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
38 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)
J-STD20 and JESD22
V
DS
150 V
R
DS(on),max
90
mΩ
I
D
13 A
Product Summary
Type Package Marking
BSZ900N15NS3 G PG-TSDSON-8 900N15N
PG-TSDSON-8
Rev. 2.1 page 1 2011-05-16
BSZ900N15NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.3 K/W
R
thJA
6 cm
2
cooling area
3)
--60
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
150 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=20 µA
234
Zero gate voltage drain current
I
DSS
V
DS
=120 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=120 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=10 A
-7490
mΩ
V
GS
=8 V, I
D
=5 A
-7591
Gate resistance
R
G
- 1.7 -
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=10 A
612-S
Values
Thermal resistance,
junction - ambient
3)
see figure 3
Rev. 2.1 page 2 2011-05-16
BSZ900N15NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 380 510 pF
Output capacitance
C
oss
-4661
Reverse transfer capacitance
C
rss
-3-
Turn-on delay time
t
d(on)
-4-ns
Rise time
t
r
-4-
Turn-off delay time
t
d(off)
-8-
Fall time
t
f
-3-
Gate Char
g
e Characteristics
4)
Gate to source charge
Q
gs
- 1.9 - nC
Gate to drain charge
Q
gd
- 0.9 -
Switching charge
Q
sw
- 1.7 -
Gate charge total
Q
g
- 5.0 7
Gate plateau voltage
V
plateau
- 5.2 - V
Output charge
Q
oss
V
DD
=75 V, V
GS
=0 V
-1217nC
Reverse Diode
Diode continous forward current
I
S
- - 13 A
Diode pulse current
I
S,pulse
--52
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=13 A,
T
j
=25 °C
- 0.9 1.2 V
Reverse recovery time
t
rr
-59 ns
Reverse recovery charge
Q
rr
- 123 - nC
4)
See figure 16 for gate charge parameter definition
V
R
=75 V, I
F
=5 A ,
di
F
/dt =100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=75 V,
f =1 MHz
V
DD
=75 V, V
GS
=10 V,
I
D
=5 A, R
G
=1.6 Ω
V
DD
=75 V, I
D
=5 A,
V
GS
=0 to 10 V
Rev. 2.1 page 3 2011-05-16
P1-P3P4-P6P7-P9

BSZ900N15NS3GATMA1

Mfr. #:
Buy BSZ900N15NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet